Highly induced photosensing behavior of Erbium (Er), Yttrium (Y) and Terbium (Tb) doped nanostructured Cadmium Sulphide (CdS) thin films prepared by nebulizer spray pyrolysis method

Improved Optoelectronic Properties of Nanostructured Eu Doped Bi2S3 Thin Films for the Detection of UV Light

“…The smallest band gap sample Bi 2 S 3 : Eu (3%) can easily complete the charge transfer process throughout the sample, which is beneficial for the photodetector. It is worth mentioning that the following factors, such as stoichiometry deviation, high photon-absorption level, orientation, and increased particle size of the sample, can reduce the band gap energy of the coated samples [2,40]. In the present case, the decrease in band gap is due to increased particle size and the generation of defects and disorder in the Bi 2 S 3 lattice, which allow for the formation of localized states and deep levels in the band gap.…”

“…This might be due to high grain size of the sample. The large grain size scatters the incident beam in all directions, and clearly enriches the light absorption ability [2,39]. The superlative light absorption ability can induce more charge carrier generation, which is considered as urgent for the photosensor.…”

“…Recently, the research hotspot has turned to finding low cost as well as non-toxic photosensing semiconductor materials in the form of nanostructures with appropriate electrical and optical properties, especially in the form of thin films, as they exhibit notable advantages, such as fewer material requirements and ease of application on different substrates. Photosensitive materials derived in the form of nanostructures (nanobelts/nanorods/nanotubes/nanowires) exhibit excellent photo-current properties, with a rapid response rate due to their superior properties such as a large surface area to volume ratio, which improves the absorption level and quantum size effect [1,2]. Precisely, researchers hold great consideration for nanorods, thanks to their electron-hole separation efficiency and the migration of their charge carriers [3,4].…”

“…To obtain a high performance photodetector, many researchers considered the incorporation of rare earth metal ions as the most effective and fastest potential approach because they have the ability act as effective luminescence centers (due to their 4f-4f transitions), as well as to provide bandgap tuning and photoionization transitions via radiative or nonradiative decay, which may induce photoresponse activity [16]. Additionally, rare earth elements have several advantages, including high environmental safety and good thermal and isotopic stability [2]. Wei et al [15] determined that the doping of rare earth element will definitely alter the band gap of the parent material.…”

Recent Progress of Non-Cadmium and Organic Quantum Dots for Optoelectronic Applications with a Focus on Photodetector Devices

“…They can efficiently convert light into an electrical signal due to their high quantum yield and absorption coefficient, allowing them to absorb much light. These characteristics make CdS QDs ideal for ultraviolet and infrared photodetectors [20].…”