Highly integrated direct conversion receiver for GSM/GPRS/EDGE with on-chip 84-dB dynamic range continuous-time /spl Sigma//spl Delta/ ADC

Guillou, Yann Le; Gaborieau, Olivier; Gamand, P.; Isberg, M.; Jakobsson, P.; Jonsson, Lars-Erik; Deaut, D. Le; Marie, H.; Mattisson, Sven; Monge, L.; Olsson, Thomas; Prouet, S.; Tired, Tobias

doi:10.1109/jssc.2004.841036

Cited by 23 publications

(5 citation statements)

References 18 publications

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“…Despite these technical challenges, the monolithic integration of homodyne receivers allowed major break-through within the cellular phone industry ( [34], [37]). …”

Section: Homodynementioning

confidence: 99%

Broadband Direct RF Digitization Receivers

Jamin¹

2014

Analog Circuits and Signal Processing

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“…Despite these technical challenges, the monolithic integration of homodyne receivers allowed major break-through within the cellular phone industry ( [34], [37]). …”

Section: Homodynementioning

confidence: 99%

Broadband Direct RF Digitization Receivers

Jamin¹

2014

Analog Circuits and Signal Processing

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“…Shift to incorporate microwave circuits in multifunction RF CMOS SOC (complementary metal-oxide-semiconductor system on chip) has been consistent in trend. When dielectric becomes thin as the case for RFIC it makes the coupling of two transmission lines decreases, thus making closely packed transmission lines having high signal integrity [1][2][3][4]. Furthermore, the thinner the microstrip line, the better the corresponding via's electric performance will be.…”

Section: Introductionmentioning

confidence: 99%

Propagation characteristics of wide synthetic quasi-TEM transmission line

Wang

Tzuang

2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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A new synthetic quasi-TEM (Transverse Electromagnetic) transmission line (TL) is presented for achieving higher characteristic impedance (Z c ). The proposed synthetic TL consists of a two-dimensional array made of complementary-conducting strips (CCS) unit cell, which permits tuning for desired propagation characteristics of the transmission line under synthesis. Based on the particular case study, both theoretical and measured results agree excellently for the comparative studies for the proposed synthetic TL and the conventional microstrip. The Z c of a synthetic TL is 130% higher than that of a wide microstrip. Furthermore, the extracted slowwave-factor is 17.7% higher than the physical limit of microstrip.

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“…6.2.3) is designed as a reconfigurable Legendre 5 th -order (Gain~63 to 65dB, BW~2.15MHz) filter response in WCDMA mode and a Butterworth 3 rd -order (Gain~25 to 28dB, BW~230kHz) response in GSM/EDGE mode. GSM/EDGE high-dynamic-range ADC's are cointegrated on chip [6]. RC auto-calibration and DC-offset cancellation in the BCF help to overcome process and temperature drifts.…”

mentioning

confidence: 99%

A SAW-less multiband WEDGE receiver

Gaborieau¹,

Mattisson

Klemmer

et al. 2009

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

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With an ever-increasing number of frequency bands supported by cellular transceivers (TRX), front-end (FE) complexity increases due to a large number of external SAW filters. The challenge of removing inter-stage filters from multiband 3G receivers (RX) resides in the additional noise contribution due to limited transmitter (TX) leakage rejection at the RX input, intermodulation (IM) products and cross-compression due to TX leakage and strong out-ofband blockers. Increased downconverter dynamic range is thus required for a SAW-less RX path. In addition, avoiding SNR degradation from reciprocal mixing imposes additional constraints on LO phase noise.The presented transceiver ( Fig. 6.2.1) integrates all RX and TX functions required to support a tri-band WCDMA/HSPA (bands I-VI, VIII, IX) and quadband GSM/GPRS/EDGE application in a single chip.The transmit section uses two separate paths: one for EGPRS (polar modulation) and another one for WCDMA (direct conversion). Compared to previously published work [1][2][3], this TRX provides a higher integration level, yielding a superior flexibility in the application and a lower bill-of-materials (BOM).The circuit employs a 2-metal passive integration technology (PICS) allowing the integration of high-Q LNA degeneration inductors, TX matching networks, PLL filters and high-density supply-decoupling capacitors. The active (10mm²) and passive (40mm²) die are double-flip-chip mounted into a 56-pin package. In order to improve the isolation between RX and TX paths (operating simultaneously in 3G mode), octagonal-shaped VCO inductors are used with mutually-orthogonal orientations to achieve better than 95dB isolation between RX and TX VCOs. RX input and TX output paths are routed orthogonally to further minimize the RF coupling. Figure 6.2.2 shows the FE architecture, comprising seven single-ended gainswitchable LNAs (three in 3G and four in 2G). A double-cascode structure provides high isolation between inputs and minimum group-delay change when switching between high and low gain (-16dB) modes. The LNA degeneration inductors are implemented in Al-metal on the passive substrate (PICS), with typical inductance/Q-factor values of 0.7nH/20 at 2GHz and 2.3nH/18 at 1GHz. In 2G mode, each pair of high/low-band LNAs employs a shared degeneration inductor to save area. The LNA output currents are combined in a 2 nd -level cascode circuit and passed through to the RX balun primary coil. Large PMOS devices are used to configure this inductance between low-and high-band settings, with transfer ratios of 6:4/4:3 in high/low band, respectively. The interstage frequency response is tuned per band using a capacitance DAC. The LNA output-current signal is AC coupled to the downconverter core via the balun secondary winding. This effectively prevents LNA even-order distortion components from entering the downconverter stage. The balun output current circulates through two identical current commutators, consisting of transistors Q1, Q2, and Q1′, Q2′ respectively. In high-band operation, the ove...

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Highly integrated direct conversion receiver for GSM/GPRS/EDGE with on-chip 84-dB dynamic range continuous-time /spl Sigma//spl Delta/ ADC

Cited by 23 publications

References 18 publications

Broadband Direct RF Digitization Receivers

Broadband Direct RF Digitization Receivers

Propagation characteristics of wide synthetic quasi-TEM transmission line

A SAW-less multiband WEDGE receiver

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