Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation (Adv. Electron. Mater. 3/2023)

Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits

“…[10] Dynamic random access memory-like (DRAM-like) charge storage memory composed of a storage capacitor and Si complementary metal oxide semiconductor (CMOS) transistors has also been suggested for precise training, but its volatile nature stemming from the transistors' large leakage current prevents its usage in large, practical networks. [11,12] A variety of capacitor and amorphous InGaZnO (a-IGZO) thinfilm transistor (TFT) based charge storage synaptic circuits [13][14][15] have proven to be a prominent solution to this shortage of adequate synapse devices capable of analog in-memory computing. a-IGZO TFT has gained attention as a back-end-of-line (BEOL) compatible transistor with several advantages, offering high mobility [16] for high-frequency operation and also providing extremely low leakage current leading to low power consumption circuits.…”

Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment

“…CMOS (complementary metal-oxide semiconductor) compatibility, wide optical bandgap (>3.0 eV), and low-temperature processes have been driving InGaZnO (IGZO) thin-film transistors (TFTs) toward future electronic devices. 1–3 In particular, the low off-current of IGZO has attracted intensive efforts in both academia and industry for capacitor-less DRAM (dynamic random access memory) technology. 4–8 Undoubtedly, in the regulation of native defects of oxide semiconductors, oxygen vacancies (V O s), have been the most important topic.…”