Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit

Ju, Inchan; Gong, Yunyi; Cressler, John D.

doi:10.1109/jssc.2020.2993720

Cited by 33 publications

(13 citation statements)

References 38 publications

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“…to meet anticipated high data rate communication [3], [4]. A variety of techniques, such as digital predistortion (DPD), exist for improving EVM [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

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Temperature-Dependent Characterization of Power Amplifiers Using an Efficient Electrothermal Analysis Technique

Taghikhani¹,

Buisman

Versleijen

et al. 2022

IEEE Trans. Microwave Theory Techn.

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In this paper, we propose an efficient methodology for the electrothermal characterization of power amplifier (PA) integrated circuits. The proposed electrothermal analysis method predicts the effect of temperature variations on the key performances of PAs, such as gain and linearity, under realistic dynamic operating conditions. A comprehensive technique for identifying an equivalent compact thermal model, using data from 3-D finite element method thermal simulation and nonlinear curve fitting algorithms, is described. Two efficient methods for electrothermal analysis applying the developed compact thermal model are reported. The validity of the methods is evaluated using commercially available electrothermal computer-aided design (CAD) tools and through extensive pulsed RF signal measurements of a PA device under test. The measurement results confirm the validity of the proposed electrothermal analysis methods. The proposed methods show significantly faster simulation speed comparing to available CAD tools for electrothermal analysis. Moreover, the results reveal the importance of electrothermal characterization in the prediction of the temperature-aware PA dynamic operation.

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“…to meet anticipated high data rate communication [3], [4]. A variety of techniques, such as digital predistortion (DPD), exist for improving EVM [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

“…A variety of techniques, such as digital predistortion (DPD), exist for improving EVM [5]- [7]. However, it is particularly challenging to compensate for fast time-varying and transient non-linearity issues [1]- [4], [8], [9].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Characterization of Power Amplifiers Using an Efficient Electrothermal Analysis Technique

Taghikhani¹,

Buisman

Versleijen

et al. 2022

IEEE Trans. Microwave Theory Techn.

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show abstract

“…In recent years, the transformer has been widely used in radio frequency (RF)/mmWave circuit design. [1]- [4] Such as voltage control oscillator(VCO), [5] frequency multiplier, mixer, [6]- [8] low noise amplifier(LNA) [9], and PA. [10]- [11] Among these, the power amplifier (PA) is one of the most significant blocks. [12] Transformer matching can achieve wideband matching, power distribute/combine, [13]- [18] and biasing function.…”

Section: Introductionmentioning

confidence: 99%

A transformer matching X-band MMIC power amplifier with temperature compensation technique on 0.25µm GaN process

Fan

Wan

Yang

et al. 2022

IEICE Electron. Express

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This work presents a transformer matching X band MMIC power amplifier(PA) on gallium nitride(GaN) process. A port impedance modeling-based transformer design method is proposed and analyzed. The method simplifies the transformer matching network design process, improves matching impedance accuracy, and relieves designer's burden. A novel compact temperature compensation (TC) circuit is also used in this design. The PA design on the 0.25µm MMIC GaN technology process, and occupies 1.594mm 2 area. At a 28V supply, the gain and output power of PA reaches 15dB and 29dBm respectively. Additionally, the designed TC circuit stabilizes PA current consumption from temperature variation. From -55 to 85℃, the PA current consumption stability improves by more than 60% by using the proposed TC bias circuit.

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“…Apart from these system-level specifications, at circuit design-level it should provide proper ground, capability to reject common mode disturbance and possess identical layout for transmit and receive configuration. In RF circuits, bias voltage and ground play an important role in deciding noise figure (especially in the case of LNA [9]), power output (especially in the case of PA [10]), gain/insertion-loss and −1 of other circuit blocks in general. If common mode disturbance exists, it will disturb the common mode biasing voltage of MOS transistor and grounding in the circuit, hence power output, −1 and gain/insertion loss characteristics of current and subsequent circuit block will be disturbed.…”

Section: Introductionmentioning

confidence: 99%

Common mode disturbance tolerant broadband differential SPDT switch for Ka-band radar

Kumar

Govindarajan

Selvaraja

2021

IEICE Electron. Express

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The proposed broadband fully differential single-pole doublethrow (SPDT) switch for Ka-band radar with high 1-dB power compression point (P −1 ) and isolation is demonstrated using 0.13 SiGe BiCMOS technology. In contrast to traditional circuit, SPDT switch utilizes fully differential topology with virtual grounding, so it also offers cancellation to common mode disturbance. As a result, this SPDT switch will help in improving radar range due to its high −1 , high range-resolution and accuracy due to its broad-bandwidth. Further, this paper also introduces the use of asymmetrical tapered inductor in SPDT switch to improve layout area of SPDT switch with normal spiral inductor. Measurement results of fabricated differential SPDT switch with conventional layout has demonstrated a minimum insertion loss of 2.9 dB and an isolation of -39 dB in 25 GHz to 40 GHz frequency-band, and input P −1 of 12.6 dBm at 34 GHz with 0.47 2 area. EM simulation results of compact differential SPDT switch with symmetrically tapered inductor in layout has demonstrated minimum insertion loss of 1.8 dB and isolation of -39 dB in same frequency-band, input P −1 of 14.1 dBm at 34 GHz with 0.11 2 area.

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Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit

Cited by 33 publications

References 38 publications

Temperature-Dependent Characterization of Power Amplifiers Using an Efficient Electrothermal Analysis Technique

Temperature-Dependent Characterization of Power Amplifiers Using an Efficient Electrothermal Analysis Technique

A transformer matching X-band MMIC power amplifier with temperature compensation technique on 0.25µm GaN process

Common mode disturbance tolerant broadband differential SPDT switch for Ka-band radar

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