Highly luminescent and stable CH3NH3PbBr3 quantum dots with 91.7% photoluminescence quantum yield: Role of guanidinium bromide dopants

Jung, Kyong Yeun; Choi, Hyungi; Kim, Hyunkyu; Park, Yun Chang; Lee, Man−Jong

doi:10.1016/j.jallcom.2020.154990

Cited by 15 publications

(2 citation statements)

References 52 publications

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“…In recent years, QDs have been frequently synthesized and utilized in fluorescence imaging, including CdSe [8], CdS [13], CdTe [14], InP [15], InP/ZnSeS [16], CuInS 2 [17], CsPbBr 3 [18] and CH 3 NH 3 PbBr [19]. Owing to their unique sizes and composition-tunable optoelectronic properties [20,21], these QDs have a wide range of applications, such as in bioimaging [13,17,22,23], light-emitting diodes [24][25][26][27] and solar cells [28].…”

Section: Stimulated Emission Depletion (Sted) Nanoscopy Is a New Super-resolution Imaging Techniquementioning

confidence: 99%

Cd‐free InP/ZnSeSquantum dots forultrahigh‐resolutionimaging of stimulated emission depletion

Liu

Xing

Cai

et al. 2021

Journal of Biophotonics

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Stimulated emission depletion (STED) nanoscopy is a promising super‐resolution imaging technique for microstructure imaging; however, the performance of super‐resolution techniques critically depends on the properties of the fluorophores (photostable fluorophores) used. In this study, a suitable probe for improving the resolution of STED nanoscopy was investigated. Quantum dots (QDs) typically exhibit good photobleaching resistance characteristics. In comparison with CdSe@ZnS QDs and CsPbBr3QDs, Cd‐free InP/ZnSeS QDs have a smaller size and exhibit an improved photobleaching resistance. Through imaging using InP/ZnSeS QDs, we achieved an ultrahigh resolution of 26.1 nm. Furthermore, we achieved a 31 nm resolution in cell experiments involving InP/ZnSeS QDs. These results indicate that Cd‐free InP/ZnSeS QDs have significant potential for application in fluorescent probes for STED nanoscopy.

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Section: Stimulated Emission Depletion (Sted) Nanoscopy Is a New Super-resolution Imaging Techniquementioning

confidence: 99%

Cd‐free InP/ZnSeSquantum dots forultrahigh‐resolutionimaging of stimulated emission depletion

Liu

Xing

Cai

et al. 2021

Journal of Biophotonics

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“…Kyun Geun Ung et al [4] studied the perovskite quantum dots (PQDs) and reported an effective strategy for highly luminescent of (PQDs) by a simple doping. In Ref [5], the fabrication of hybrid nanoflowers graphene quantum dots (NFGQDs)/ZnO was investigated.…”

Section: Introductionmentioning

confidence: 99%

External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot

Elias¹

2021

JAMP

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Spherical layer quantum dots (SLQDs) attract a great deal of importance, and have various optoelectronics applications due to their outstanding optical and electrical properties. The photoluminescence (PL) and the electroluminescence (EL) spectra of InAs (SLQDs) were investigated theoretically under the presence of external parameters (pressure, temperature, electric field). Existing of both the temperature and the applied electric field lead to a significant decrease in photoluminescence peak energy (red-shift), while an increase existed in presence of applied hydrostatic pressure (blue-shift). Also with increasing the quantum azimuthal number the photoluminescence peak energy increase. In addition, we found no effect on the band shape of the luminescence as a result of existing such parameters. The study indicates the importance of such parameters as fitting parameters for photoluminescence spectra.

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Methyl Ammonium Lead Bromide Perovskite Films and Their Applications to Optoelectronic Devices

Swain

2022

Materials Horizons: From Nature to Nanomaterials

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Highly luminescent and stable CH3NH3PbBr3 quantum dots with 91.7% photoluminescence quantum yield: Role of guanidinium bromide dopants

Cited by 15 publications

References 52 publications

Cd‐free InP/ZnSeSquantum dots forultrahigh‐resolutionimaging of stimulated emission depletion

Cd‐free InP/ZnSeSquantum dots forultrahigh‐resolutionimaging of stimulated emission depletion

External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot

Methyl Ammonium Lead Bromide Perovskite Films and Their Applications to Optoelectronic Devices

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