Highly Ordered, Millimeter‐Scale, Continuous, Single‐Crystalline Graphene Monolayer Formed on Ru (0001)

Pan, Yi; Zhang, Haigang; Shi, Dean; Sun, Jianing; Du, Shixuan; Liu, Feng; Gao, Hong Jun

doi:10.1002/adma.200800761

Cited by 413 publications

(368 citation statements)

References 30 publications

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“…[15][16][17][18] The preparation of highly ordered graphene can be extended even up to the millimeter scale for epitaxial graphene grown on Ru(0001). 19 No bond breakage was revealed even over the substrate steps. Furthermore, MLG can be grown also on thin films of (0001)-oriented Ru deposited on SiO 2 /Si (Ref.…”

Section: Introductionmentioning

confidence: 99%

Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)

et al. 2011

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It is shown that the surface of an epitaxial graphene monolayer grown on Ru(0001) could be used as a quite efficient external mirror for He-atom microscopy, with a specular reflectivity of 20% of the incident beam. Furthermore, the system is stable up to 1150 K, and the He reflectivity remains almost unchanged after exposure to air. Additionally, the high reflectivity for H 2 molecules (11%) opens up the development of a H 2 microprobe suitable for lithography. The Debye temperature for this epitaxial graphene monolayer has been determined from a study of the temperature dependence of the He specular intensity as a function of incident parameters. A value of 1045 K has been obtained, which is much higher than the 590 K reported for graphite under similar conditions, and close to the value of 1287 K calculated for isolated graphene.

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Section: Introductionmentioning

confidence: 99%

Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)

et al. 2011

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“…For example, an epitaxial strain of ∼ ±1% builds up in the graphene when it is grown on different substrates [36][37][38][39]; uniaxial strain up to ∼ 1.3% to a graphene monolayer can be applied by using two-and four-point bending setups [35]; and uniaxial strain ranging from 0 to 30% can be achieved for large-scale graphene films transferred to a pre-stretched substrate [36].…”

Section: Fig 2 Summarized the Contact Angles Of The Water Droplets Wmentioning

confidence: 99%

Control of surface wettability via strain engineering

et al. 2013

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Reversible control of surface wettability has wide applications in lab-on-chip systems, tunable optical lenses, and microfluidic tools. Using a graphene sheet as a sample material and molecular dynamic (MD) simulations, we demonstrate that strain engineering can serve as an effective way to control the surface wettability. The contact angles θ of water droplets on a graphene vary from 72.5 • to 106 • under biaxial strains ranging from −10% to 10% that are applied on the graphene layer. For an intrinsic hydrophilic surface (at zero strain), the variation of θ upon the applied strains is more sensitive, i.e., from 0 • to 74.8 • . Overall the cosines of the contact angles exhibit a linear relation with respect to the strains. In light of the inherent dependence of the contact angle on liquid-solid interfacial energy, we develop an analytic model to show the cos θ as a linear function of the adsorption energy E ads of a single water molecule over the substrate surface. This model agrees with our MD results very well. Together with the linear dependence of E ads on biaxial strains, we can thus understand the effect of strains on the surface wettability. Thanks to the ease of reversibly applying mechanical strains in micro/nano-electromechanical systems (MEMS/NEMS), we believe that strain engineering can be a promising means to achieve the reversibly control of surface wettability.

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“…It should be noted that millimeter sized single-crystal graphene growth has been successfully achieved through segregation growth on Ni [26] and Ru [27]. However, additional processes were required to optimize the substrate, making it less desirable than Cu.…”

Section: Substratementioning

confidence: 99%

Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

Park¹,

Kim²,

Park³

2014

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Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

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Highly Ordered, Millimeter‐Scale, Continuous, Single‐Crystalline Graphene Monolayer Formed on Ru (0001)

Abstract: This reference has been reinstated in the print version in corrections made on June 24 th 2009. The existing references 21a and 21b become 21b and 21c, respectively. The authors apologize for any misunderstandings caused.

Cited by 413 publications

References 30 publications

Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)

Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)

Control of surface wettability via strain engineering

Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

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