Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

Ziberi, B.; Cornejo, Marina; Frost, Frank; Rauschenbach, B.

doi:10.1088/0953-8984/21/22/224003

Cited by 122 publications

(99 citation statements)

References 58 publications

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“…However, rippling is observed in experiments for bombardment in Ge at 250 eV. 22 This suggests that although Sigmund's energy distribution is indeed a good model for our MD results, the BH's erosion based criterion seems to fail to fully characterize surface instabilities.…”

Section: B Profiles Of Deposited Energymentioning

confidence: 84%

Ion impact energy distribution and sputtering of Si and Ge

Hossain

Freund

Johnson

2012

Journal of Applied Physics

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Structural characterization of CdSe/ZnS quantum dots using medium energy ion scattering Appl. Phys. Lett. 101, 023110 (2012) Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces Rev. Sci. Instrum. 83, 073304 (2012) Influence of ion source configuration and its operation parameters on the target sputtering and implantation process Rev. Sci. Instrum. 83, 063304 (2012) Note: Measuring effects of Ar-ion cleaning on the secondary electron yield of copper due to electron impact Rev. Sci. Instrum. 83, 066105 (2012) Surface instability of binary compounds caused by sputter yield amplification J. Appl. Phys. 111, 114305 (2012) Additional information on J. Appl. Phys. The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This-along with the assumption of an ellipsoidal region of energy deposition-is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390(1988] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0 , 10 , 20 , 30 , 40 , 50 , 60 , 70 , and 80 ). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations. V C 2012 American Institute of Physics. [http://dx

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Section: B Profiles Of Deposited Energymentioning

confidence: 84%

Ion impact energy distribution and sputtering of Si and Ge

Hossain

Freund

Johnson

2012

Journal of Applied Physics

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“…1. Ion bombardment experiments were performed using a system constructed by some of the authors for the purpose of these experiments [10]. The diameter of the Kaufman-type broad beam ion source was approximately 180 mm.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Low-energy ion beam sputtering (IBS) is a powerful bottom-up technology for generating diverse self-organized nanostructures, such as ripples and dots on different materials including amorphous SiO 2 [1][2][3][4][5][6][7], single crystalline Si [8][9][10][11][12], Ge [10,13] and Ag [14], as well as compound semiconductors GaSb [15] and InP [16]; the IBS technology offers the potential to achieve high throughput and fabrication of large areas [10,[17][18][19]. Ion beam parameters (species, incidence angle, energy, flux, etc) and substrate parameters (material, temperature, initial surface topography, etc) interact to generate the features of such nanopatterns.…”

Section: Introductionmentioning

confidence: 99%

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO 2 ). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar + IBS with Al co-deposition was investigated on smooth SiO 2 , pre-rippled SiO 2 , and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO 2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO 2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO 2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO 2 , respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasiblazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlO x F y compounds originating mainly from the Al source.

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“…Self-organized methods are an interesting alternative for patterning the substrates. As demonstrated in several seminal works [12][13][14], low-energy ion beam sputtering (IBS) has good potential as a single-step and fast processing route to produce large-area (size tunable), self-organized nanoscale patterned surfaces compatible with the present semiconductor industry. Ion irradiation of a self-organized metal nanowire (NW) stencil mask allows the projection of its morphological features into the supporting substrates which can be either amorphous, like glass [15], or crystalline, as GaAs and Silicon [16,17].…”

Section: Introductionmentioning

confidence: 99%

Self-Organized Nanoscale Roughness Engineering for Broadband Light Trapping in Thin Film Solar Cells

et al. 2017

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Abstract:We present a self-organized method based on defocused ion beam sputtering for nanostructuring glass substrates which feature antireflective and light trapping effects. By irradiating the substrate, capped with a thin gold (Au) film, a self-organized Au nanowire stencil mask is firstly created. The morphology of the mask is then transferred to the glass surface by further irradiating the substrate, finally producing high aspect ratio, uniaxial ripple-like nanostructures whose morphological parameters can be tailored by varying the ion fluence. The effect of a Ti adhesion layer, interposed between glass and Au with the role of inhibiting nanowire dewetting, has also been investigated in order to achieve an improved morphological tunability of the templates. Morphological and optical characterization have been carried out, revealing remarkable light trapping performance for the largest ion fluences. The photon harvesting capability of the nanostructured glass has been tested for different preparation conditions by fabricating thin film amorphous Si solar cells. The comparison of devices grown on textured and flat substrates reveals a relative increase of the short circuit current up to 25%. However, a detrimental impact on the electrical performance is observed with the rougher morphologies endowed with steep v-shaped grooves. We finally demonstrate that post-growth ion beam restructuring of the glass template represents a viable approach toward improved electrical performance.

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Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

Cited by 122 publications

References 58 publications

Ion impact energy distribution and sputtering of Si and Ge

Ion impact energy distribution and sputtering of Si and Ge

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

Self-Organized Nanoscale Roughness Engineering for Broadband Light Trapping in Thin Film Solar Cells

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