Highly-ordered silicon nanowire arrays for photoelectrochemical hydrogen evolution: an investigation on the effect of wire diameter, length and inter-wire spacing

Thalluri, Sitaramanjaneya Mouli; Borme, Jérôme; Xiong, Dehua; Xu, Junyuan; Li, Wei; Amorim, Isilda; Alpuim, P.; Gaspar, J.; Fonseca, Hélder; Qiao, Liang; Liu, Lifeng

doi:10.1039/c7se00591a

Cited by 36 publications

(17 citation statements)

References 27 publications

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“…[13][14][15] However, to date, most studies have focused on the growth, fabrication, and fundamental characterization, with several publications on photoelectrochemical applications of these NWs due to their greatly increased surface area. [16][17][18][19] Optical devices are another intriguing application because the three-dimensional (3-D) morphology offers an opportunity for controlling the light absorption and emission behavior. However, there have been no reports on the optical characteristics of hierarchical NWs.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

et al. 2020

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Section: Introductionmentioning

confidence: 99%

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

et al. 2020

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“…Various emerging microfabrication technologies allow the machining of the surface texture of black silicon from nanometer [ 17 ] to micrometer scale. [ 16,60,61 ] A variety of black silicon samples have been created by optimizing the surface structures; [ 6,10–12,18,60 ] however, the ultimate objective is to fabricate a geometry that provides strong light trapping performance. The light trapping is manipulated through extension of optical path caused by multiple reflections and refractivity, as well as energy decay through the light–silicon coupling.…”

Section: Hierarchical Design and Antireflectivitymentioning

confidence: 99%

“…[ 8,9 ] These surface structures vary in size and geometry, and they are categorized as micro/nanoscale [ 10–14 ] and order/disordered forms. [ 15,16 ] Noteworthy, the structures with high aspect ratio [ 7,17–19 ] and with size matching the wavelength of incident light [ 6,9,20 ] exhibit low reflectivity. [ 9,21 ] The former parameter extends the optical path of incident light, [ 10,22 ] while the latter dimension facilitates coupling between light and materials.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Broadband Reflectivity in Black Silicon via Synergy between Hierarchical Texture and Specific‐Size Au Nanoparticles

Zhang

Martinsen

et al. 2020

Advanced Optical Materials

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in size and geometry, and they are categorized as micro/nanoscale [10-14] and order/ disordered forms. [15,16] Noteworthy, the structures with high aspect ratio [7,17-19] and with size matching the wavelength of incident light [6,9,20] exhibit low reflectivity. [9,21] The former parameter extends the optical path of incident light, [10,22] while the latter dimension facilitates coupling between light and materials. [5,23] These effects allow the incident light to get trapped and decayed in the surface structures, giving rise to ultralow reflection at near-ultraviolet (UV) to visible (vis) wavelengths. [24-26] A series of fabrication approaches, including metal-assisted chemical etching, [27,28] electrochemical etching, [29,30] and reactive ion etching (RIE) [9] has been developed to create such surface textures. In particular, RIE enables highly selective etching and produces smooth, vertical profiles, as well as higher structural resolution and density. [31,32] Research into such processes has focused on mask-assisted [33-37] and maskless etching, [38-41] both of which can be effectively used to produce black silicon with micro/nanoscale features. Although a few studies have proposed the combination of micro-and nanostructures, they mainly focused on the suppression of light reflection at the wavelengths below 1100 nm. The antireflectance of black silicon in the near-infrared (NIR) range (over 1100 nm) is still weak due to silicon's intrinsic bandgap of 1.12 eV. [5] Antireflectivity is one of the critical factors defining the performance of black silicon in optical, photothermal, photochemical, and optoelectronic applications. The photonic applications under visible light illumination are commonly tuned through surface texturing; however, their promising performance under longer wavelength (>1100 nm) requires either intrinsic lattice modifications or additional substance enhancement. Recent advances in microfabrication and material engineering have enabled in-depth exploration into the synergy between surface texturing and material reinforcement. In this study, black silicon with novel chimney-like hierarchical micro/nanostructures is fabricated via two-step reactive ion etching, and subsequently gold nanoparticles (Au NPs) are loaded on the black silicon by magnetron sputtering deposition. The micro/nanostructures result in synergy effect with the Au NPs on suppression of light reflection. An ultralow broadband reflection (<1%, wavelength 220-2600 nm) is achieved from the Au-loaded black silicon substrates. The impact of Au NPs and structural design such as size, spacing, shape, and etching duration on antireflectivity of black silicon is investigated. This study opens up new avenue for high-efficiency applications of black silicon in the fields of sustainable energy and photonics/microelectronics.

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“…Silicon nitride, for example, is of interest in this context. The key challenge for the fabrication of a single, three dimensionally oriented and localized SiNW is however the nanoscale confinement of the catalyst particle, which demands, for instance, complex and high-cost electron beam lithography or focused ion or electron beam induced deposition of the catalyst material [10,30,31]. A simple but capable technique for the catalyst deposition and confinement was shown by Engstrom et al [14] by implementing so-called stencil masks in combination with an evaporated catalyst material.…”

Section: Introductionmentioning

confidence: 99%

Exploring nanowire regrowth for the integration of bottom-up grown silicon nanowires into AFM scanning probes

Behroudj

Salimitari

Nilsen

et al. 2021

J. Micromech. Microeng.

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Bottom-up grown single-crystalline silicon nanowires (SiNWs) are highly intriguing to build nanoscale probes, for instance for atomic force microscopy (AFM), due to their mechanical robustness and high aspect ratio geometry. Several strategies to build such nanowire-equipped probes were explored but their fabrication is still elaborate, time-consuming and relies partly on single-crystalline substrates. Here, we explore a new strategy to fabricate AFM probes that are equipped with single-SiNW scanning tips. The conceptual evaluation begins with a discussion on the overall design and softness of such probes based on finite-element-method simulations. For the experimental realization, SiNWs were grown by the well-established gold-catalyzed vapor–liquid–solid method employing gaseous monosilane. As-grown SiNWs were subsequently transferred onto flexible membranes and even freestanding AFM microcantilever beams via mechanical nanowire contact printing. Elongation of the deposited nanowires by so-called regrowth was triggered by reusing the original gold catalyst to yield the prospective AFM scanning tip. SiNW-equipped scanning probes were created in this manner and were successfully employed for topography imaging. Although a multitude of challenges remains, the created probes showed an overall convincing performance and a superior durability.

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Highly-ordered silicon nanowire arrays for photoelectrochemical hydrogen evolution: an investigation on the effect of wire diameter, length and inter-wire spacing

Abstract: The influence of structural parameters of highly-ordered silicon nanowire arrays on their solar-driven HER performance is systematically investigated.

Cited by 36 publications

References 27 publications

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

Ultralow Broadband Reflectivity in Black Silicon via Synergy between Hierarchical Texture and Specific‐Size Au Nanoparticles

Exploring nanowire regrowth for the integration of bottom-up grown silicon nanowires into AFM scanning probes

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