Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

Yadav, B. S.; Singh, Sukhvinder; Ganguli, Tapas; Kumar, Ravi; Major, S.S.; Srinivasa, R.S.

doi:10.1016/j.tsf.2008.06.085

Cited by 16 publications

(7 citation statements)

References 63 publications

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“…Moreover, AFM provides microscopic information related to the topography of the sample whereas HRXRD delivers crucial information related to the crystalline quality. Similar trends are also reported by other researchers (Dixit et al, 2008;Pal et al, 2015;Yadav et al, 2008). Furthermore, the thickness of the GaAs layer measured from the surface profiler is about 0.31 mm.…”

Section: Resultssupporting

confidence: 90%

Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation

Kumar

Dixit

Sinha

et al. 2016

J Synchrotron Radiat

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Williamson-Hall (WH) analysis is a well established method for studying the microstructural properties of epilayers grown on foreign substrates. However, the method becomes inapplicable in specific cases where the structure factor considerations and the presence of anti-phase domains forbid the data acquisition for certain reflections in conventional high-resolution X-ray diffraction (HRXRD) measurements. Here, this limitation is overcome by exploiting the large intensity (25 µW mm(-2)) and high photon energy (15.5 keV) of the X-ray beam obtained from a synchrotron radiation source. The lateral coherence length, vertical coherence length, tilt and micro-strain of GaAs epilayers grown on Si substrate have been successfully measured using the conventional WH analysis. The microstructure information obtained from the conventional WH analysis based on the data acquired at the synchrotron radiation source is in reasonable agreement with the results obtained from atomic force microscope and surface profiler measurements. Such information cannot be obtained on a laboratory-based HRXRD system where modification of the WH method by involving a set of parallel asymmetric crystallographic planes is found to be essential. However, the information obtained from the modified WH method is along a different crystallographic orientation.

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Section: Resultssupporting

confidence: 90%

Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation

Kumar

Dixit

Sinha

et al. 2016

J Synchrotron Radiat

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“…al and Sanjay et. al achieved FWHM of around 3-6° for GaN films grown on ZnO and few layer graphene (FLG) respectively 34,35 . Wong et.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Sankaranarayanan

Palanivelu

Ramesh

et al. 2020

Sci Rep

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Gallium nitride (Gan) was epitaxially grown on nitrogen doped single layer graphene (n-SLG) substrates using chemical vapour deposition (cVD) technique. the results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy dispersive x-ray (EDX) spectroscopy and x-ray photoelectron (XPS) spectroscopy revealed traces of oxygen, carbon and nitrogen occurring either as contamination or as an effect of doping during the GaN growth process. In addition, PL revealed a weak yellow luminescence peak in all the samples due to the presence of N-SLG. From the obtained results it was evident that, presence of n-SLG underneath Gan helped in improving the material properties. it was seen from the currentvoltage (i-V) response that the barrier height estimated is in good agreement with the Schottky-Mott model, while the ideality factor is close to unity, emphasizing that there are no surface and interface related inhomogeneity in the samples. the photodetector fabricated with this material exhibit high device performances in terms of carrier mobility, sensitivity, responsivity and detectivity. The hall measurement values clearly portray that, the GaN thus grown possess high electron contents which was beneficial in attaining extraordinary device performance. The fascinating properties of gallium nitride (GaN) such as wide direct band gap nature, ability to tune the band gap, high breakdown voltage, carrier mobility and chemical stability, make GaN a widely explored semiconductor material. The ability to operate at high power, high frequency and tolerance towards harsh environments is also a reason for preferring GaN 1-8. Conventionally, GaN is epitaxially grown using metal organic chemical vapour deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapour phase vapour epitaxy (HVPE) and chemical vapour deposition (CVD) techniques 9-12. It is worth to note that GaN is still being epitaxially grown on foreign substrates such as silicon (Si), sapphire (Al 2 O 3) and silicon carbide (SiC). Sapphire is conventionally preferred as the substrate material due to its hexagonal crystal structure, availability in high crystalline quality and large area. But, due to the thermal and lattice variations between sapphire substrates and GaN, the aforesaid material properties of GaN cannot be achieved effectively. Also, poor thermal conductivity of sapphire restricts the usage of GaN in high power and optoelectronic devices 13-23. To overcome these deficiencies, it is beneficial to utilize graphene as an intermediate layer for the growth of GaN. Graphene, a two-dimensional (2D) material with a planar honeycomb like configuration of sp 2 hybridized carbon atoms, has attracted enormous interest for use in various optical and electronic device applications due to its unique material properties such as high optical transparency, thermal and electrical conductivity and

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“…It has been reported that the deposition of epitaxial GaN films with (002) orientation, which is preferred for device applications, 19,20 requires substrate temperatures higher than 600 1C. [21][22][23][24][25] For instance, Yadav et al 25 deposited GaN films via radio frequency sputtering, and investigated the dependence of GaN crystal structure on substrate temperature. They reported that below 300 1C the films were mostly amorphous while between 3001 and 550 1C the films were polycrystalline with (100) preferential orientation.…”

Section: Introductionmentioning

confidence: 99%

A route to low temperature growth of single crystal GaN on sapphire

2015

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Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

Cited by 16 publications

References 63 publications

Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation

Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

A route to low temperature growth of single crystal GaN on sapphire

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