Highly Polarized Green Light Emitting Diode in<i>m</i>-Axis GaInN/GaN

You, Shi; Detchprohm, Theeradetch; Zhu, Mingwei; Hou, Wenting; Preble, E. A.; Hanser, Drew; Paskova, T.; Wetzel, Christian

doi:10.1143/apex.3.102103

Cited by 33 publications

(58 citation statements)

References 17 publications

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“…and . Figure shows Δ E as a function of substrate orientation for (a) blue‐emitting (450 nm) InGaN‐QWs and (b) green‐emitting (520 nm) InGaN‐QWs . Figure shows In‐composition dependence of Δ E for (a) nonpolar‐InGaN‐QWs and (b) semipolar (11–22)‐InGaN‐QWs .…”

Section: Introductionmentioning

confidence: 99%

“…Reported experimental results of Δ E as a function of substrate orientation for (a) 450 nm (Refs. ) and (b) 520 nm InGaN‐QWs (Refs. ).…”

Section: Introductionmentioning

confidence: 99%

“…Reported experimental results of Δ E as a function of In‐composition for (a) nonpolar (Refs. ) and (b) semipolar (11–22)‐InGaN‐QWs (Refs. ).…”

Section: Introductionmentioning

confidence: 99%

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Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence‐band parameters in InGaN alloy material

Sakai

Yamaguchi

2015

Physica Status Solidi (b)

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In order to make a precise determination of InGaN material parameters (valence-band A parameters and deformation potentials), reported experimental data on polarization properties have been analyzed by the kÁp perturbation theory, in which we utilized fact that the polarization properties are sensitive to the material parameters. It is found that the polarization properties are largely affected by the deformation potentials while the valence-band A parameters have small effects. In addition, it is found that two deformation potentials' sets roughly fit with the reported experimental data. From the calculation using these two parameters' sets, it is predicted that low-angle semipolar substrate orientation (u ¼ 308-408) are promising for low-cost and high-performance green laser diodes with cleaved facet cavity mirrors. These results support our previous prediction based on analytical calculations. 1 Introduction Utilization of InGaN quantum wells (QWs) on non-c-crystal planes for active layers of green laser diodes (LDs) has attracted attention, because internal electronic field can be reduced in the QWs [1]. In these structures, in-plane optical anisotropy appears, and optical gain is concentrated into one particular direction. Thus, the optical polarization properties have to be considered for the structural design of laser devices. In general, there are two bands at the top of the valence bands in InGaN material system, and one of them has X 1 -like character and the other has X 2 -like, where the X 1 direction is the normal direction to the c-axis on the substrate plane, and the X 2 direction is the projection of the c-axis on the substrate plane, as shown in Fig. 1(a). Polarization properties are mainly determined by the energy difference (DE) between X 1 -and X 2 -like bands shown in Fig. 1(b). Thus, the value of DE can be an index of the polarization properties (e.g., positive sign of DE means that emission is polarized in the X 1 direction). In our previous paper, we reported that these polarization properties are dependent on the substrate orientations and QW

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Section: Introductionmentioning

confidence: 99%

“…Reported experimental results of Δ E as a function of substrate orientation for (a) 450 nm (Refs. ) and (b) 520 nm InGaN‐QWs (Refs. ).…”

Section: Introductionmentioning

confidence: 99%

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Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence‐band parameters in InGaN alloy material

Sakai

Yamaguchi

2015

Physica Status Solidi (b)

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“…A well-characterized linear polarized GaInN/GaN LED emitting in the cyan spectral range is shown in Fig. 3 [24].…”

Section: E Polarized Ledsmentioning

confidence: 99%

Rare-Earth-Free Direct-Emitting Light-Emitting Diodes for Solid-State Lighting

Wetzel

Detchprohm

2014

IEEE Trans. on Ind. Applicat.

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The advent of a wide-bandgap GaN p-n junction has enabled highly efficient blue light-emitting diodes (LEDs) in GaInN/GaN heteroepitaxy. The system also enables a much wider range of emission wavelengths. We summarize progress in epitaxial materials development of green, yellow, and orange direct-emitting LEDs that bypass the steps of external phosphor conversion to achieve higher stability, efficiency, and higher overall color rendering quality for wider adoption of one of the widest power savings resources so far identified.

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“…1 Although both the output power and light conversion efficiency in LEDs have improved significantly, further improvements of their characteristics may bring about the development of novel integrated applications. [2][3][4] Emission power from non-or semipolar GaN-based LEDs is lower than that from LEDs grown on c-plane (0001) sapphire because of the comparatively poor quality of heteroepitaxial GaN films grown on the r-plane (1102). Many attempts to develop polarized LEDs by the use of polarizing plates, semi-or nonpolar crystal growth and introducing nanostructures have been reported.…”

Section: Introductionmentioning

confidence: 99%

Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions

et al. 2015

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We analytically investigated the influence of grating shape on polarization characteristics of the emission from a GaN-based light-emitting diode with a low-contrast subwavelength grating (SWG), such as SiO 2 -SWG. The electromagnetic field distribution, calculated using the finite-difference time-domain method, predicted that the polarization characteristics strongly depend on the grating side slope. A trapezoid SiO 2 -SWG was fabricated on the GaN-based-LED using electron-beam lithography. The optical characteristics of the electroluminescence agreed with those theoretically predicted, and we succeeded in demonstrating the influence of grating shape on the polarization of LED emission.

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Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN

Cited by 33 publications

References 17 publications

Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence‐band parameters in InGaN alloy material

Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence‐band parameters in InGaN alloy material

Rare-Earth-Free Direct-Emitting Light-Emitting Diodes for Solid-State Lighting

Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions

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