Highly Reliable 28nm Embedded Flash Process Development for High-Density and High-Speed Automotive Grade-1 Application

A 0.11pJ/bit read energy embedded NanoBridge non-volatile memory and its integration in a 28 nm 32 bit RISC-V microcontroller units

“…Consequently, high read reliability, low read latency, and low read energy consumption become crucial requirements, overshadowing the need for low write latency, low write energy consumption, and high endurance time. The same as the eFLASH, 31) the NB, 17) ReRAM, 32) and MRAM 33) achieve operation temperature range (OTR) of −40 °C to 150 °C, while the PCM 34) and FeRAM 35) have narrower OTRs of 0 °C to 85 °C and −40 °C to 125 °C, respectively. A sense amplifier is typically used to execute read operations in eFLASH 31) and other emerging memories [32][33][34][35] due to the relatively small ON/OFF conductance ratio.…”

“…The same as the eFLASH, 31) the NB, 17) ReRAM, 32) and MRAM 33) achieve operation temperature range (OTR) of −40 °C to 150 °C, while the PCM 34) and FeRAM 35) have narrower OTRs of 0 °C to 85 °C and −40 °C to 125 °C, respectively. A sense amplifier is typically used to execute read operations in eFLASH 31) and other emerging memories [32][33][34][35] due to the relatively small ON/OFF conductance ratio. Thanks to a large ON/OFF conductance ratio, a simpler circuit can read the NB state, thereby contributing to reduced read latency and energy consumption.…”