2021
DOI: 10.21203/rs.3.rs-585213/v1
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Highly Reliable Memory Operation of High Density Three-Terminal Thyristor Random Access Memory

Abstract: Three-terminal (3-T) thyristor random-access memory is explored for a next generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (VGC,ST) and anode- cathode voltage (VAC,ST) in the standby state for superior data retention characteristics and low-power operation. The device with the optimized VGC,ST of -0.4 V and VAC,ST of 0.55 V shows the continuous data retention capability without refresh opera… Show more

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