Highly reliable MIM capacitor technology using low pressure CVD-WN cylinder storage-node for 0.12 μm-scale embedded DRAM

Kamiyama, Satoshi; Drynan, John M.; Takaishi, Y.; Koyama, K.

doi:10.1109/vlsit.1999.799329

Cited by 6 publications

(2 citation statements)

References 1 publication

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“…Experimental evidence to support the above theory can be found in the work by Kamiyama et al on a TiN/Ta 2 O 5 /W capacitor structure reported in 1993 (21). Kamiyama et al pointed out that the Ta 2 O 5 /W interface tended to be rough in a subsequent report published in 1999 (22). It is believed the barrier height, which is a function of the metal work function, between TiN and Ta 2 O 5 and that between W and Ta 2 O 5 are probably not too different; this can be seen from Table I of Matsuhashi and Nishikawa (23).…”

Section: Evidence Supporting Theorymentioning

confidence: 82%

An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Capacitors Using High-k Dielectric Materials

Lau

2012

ECS Trans.

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Historically, there is a controversy regarding the current-voltage (I-V) characteristics of thin film MIM (metal-insulator-metal) capacitors, which is quite frequently modeled by either the Schottky model or the Poole-Frenkel model. In this letter, the author points out that the two models actually can be unified. The physics underlying this model involves a non-uniform distribution of defect states such that a very large quantity of defect states exist at the two interface of the MIM capacitor while the density of defect states in the insulator bulk is relatively low, resulting in an M/n-i-n/M structure. This unified Schottky-Poole-Frenkel model can be further extended to include other effects like space charge limited current, tunneling, etc. Evidence supporting this theory will be provided.

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Section: Evidence Supporting Theorymentioning

confidence: 82%

An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Capacitors Using High-k Dielectric Materials

Lau

2012

ECS Trans.

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show abstract

“…In addition, Kamiyama et al pointed out that the Ta 2 O 5 /W interface tended to be rough in a subsequent report published in 1999. 32 It is believed the barrier height, which is a function of the metal work function, between TiN and Ta 2 O 5 and that between W and Ta 2 O 5 are probably not too different; this can be seen from Table II of Matsuhashi and Nishikawa. 33 Thus it is expected that the effective Schottky barrier height at the Ta 2 O 5 /W interface is probably significantly lower than that at the TiN/Ta 2 O 5 interface by Mechanism B instead of by Mechanism A.…”

Section: Evidence Supporting Theorymentioning

confidence: 97%

An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Thin Film Metal-Insulator-Metal Capacitors with Examples for Various High-k Dielectric Materials

Lau

2012

ECS J. Solid State Sci. Technol.

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Historically, there is a controversy regarding the current-voltage (I-V) characteristics of thin film MIM (metal-insulator-metal) capacitors, which is quite frequently modeled by either the Schottky model or the Poole-Frenkel model. In this paper, the author points out that the two models actually can be unified. The physics underlying this model involves a non-uniform distribution of deep donor defect states such that a very large quantity of defect states exist at the two interface of the MIM capacitor while the density of defect states in the insulator bulk is relatively low, resulting in an M/n-i-n/M structure. This unified Schottky-Poole-Frenkel model can be further extended to include other effects like space charge limited current and tunneling. The effect of trap limited space charge limited current is also discussed. Examples of the application of this theory will be provided for MIM capacitors based on various high-k dielectric materials like tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide.

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Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

Kim

2007

Current Applied Physics

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Highly reliable MIM capacitor technology using low pressure CVD-WN cylinder storage-node for 0.12 μm-scale embedded DRAM

Cited by 6 publications

References 1 publication

An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Capacitors Using High-k Dielectric Materials

An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Capacitors Using High-k Dielectric Materials

An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Thin Film Metal-Insulator-Metal Capacitors with Examples for Various High-k Dielectric Materials

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

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