Highly Reliable Thin Silicon Dioxide Layers Grown on Heavily Phosphorus Doped Poly‐Si by Rapid Thermal Oxidation

Ohyu, K.; Wade, Yasuo; Iijima, S.; Natsuaki, N.

doi:10.1149/1.2086924

Cited by 17 publications

(5 citation statements)

References 15 publications

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“…Furthermore, a two-step process where devices sequentially patterned with a thin metal seeding layer are then selectively developed in parallel in a CVD reactor may offer advantages for microelectronics by the reduction of the number of process steps and by the inherent self-alignment. 2 Pure copper has been deposited by CVD from various metalorganic precursors, in particular Cu~R2, where R is generally a ~-diketonate, 3-~5 and Cu~/RL, where R is a ~diketonate or cyclopentadienyl group and L is a neutral stabilizing ligand (alkene, alkyne, or phosphine). ~623 In most cases, the copper film growth occurred selectively on metallic (W, Ta, A1, Pt, Pd, Au, Cr, ...) vs. dielectric surfaces (SiO2, polyimide, Si3N4 .... ).6-g.12-16,18.21-25 Fundamental studies of the adsorption of such precursors on metallic 24' 25 and insulator surfaces, 25' 26 and CVD experiments addressing the mechanism of decomposition ~~ improved our understanding of the selectivity of the copper deposition.…”

Section: Discussionmentioning

confidence: 99%

“…Furthermore, a two-step process where devices sequentially patterned with a thin metal seeding layer are then selectively developed in parallel in a CVD reactor may offer advantages for microelectronics by the reduction of the number of process steps and by the inherent self-alignment. 2 Pure copper has been deposited by CVD from various metalorganic precursors, in particular Cu~R2, where R is generally a ~-diketonate, 3-~5 and Cu~/RL, where R is a ~-diketonate or cyclopentadienyl group and L is a neutral stabilizing ligand (alkene, alkyne, or phosphine). ~623 In most cases, the copper film growth occurred selectively on Some observations however remain incompletely explained, as for instance the fact that the addition of water vapor to the reagent mixture was found to enhance the copper deposition rate from the bis-hexafluoroazetylacetonate Cu(hfa)2 precursor.…”

Section: Institut Lnterddpartemental De Microscopic Electronique Epfmentioning

confidence: 99%

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Characterization of Thin SiO2 Grown by Rapid Thermal Processing as Influenced by Processing Parameters

Eftekhari

1993

J. Electrochem. Soc.

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5Significant changes in the electrical characteristics of thin SiO2 grown by rapid thermal processing were obtained as the processing parameters were changed. The low leakage current corresponding to high barrier height was obtained at the growth temperature of 1000~ The fixed charge density and breakdown voltage decreased as the growth temperature increased. Rapid thermal annealing at 1000~ improved the leakage current. Also, rapid thermal annealing improved the breakdown voltage and caused a reduction in the fixed charge density.High quality, thin SiO2 (=10 nm) layers are key components of metal oxide semiconductor (MOS) very large scale integrated (VLSI) circuits. It has been demonstrated that such layers grown by rapid thermal processing (RTP) have better quality compared with the layers grown by the conventional furnace oxidation. 1' 2 Much of the work in RTP have been centered around the study of kinetics of the oxide grown. 3-~ Little information is available on the effect of the processing parameters on the electrical characteristics of these films. 6' 7 The purpose of this work is to report the influence of the processing parameters on the electrical characteristics of thin SiO2 .layers grown by RTP. The parameters of interest are leakage current, fixed charge density, and breakdown voltage. The effect of annealing on these parameters is also reported. ExperimentalSilicon used in these experiments was p-type CZ grown with (100) orientation and resistivity of about 0.5 ~-cm. Silicon wafers received standard cleaning and etching processes before oxidation. SiO2 layers of 12 _+ 1 nm thickness were thermally grown using an AG Associate heat pulse. The oxidation was dry and carried out in the temperature range 950-1150~ for a time range of 25-300 s. Some samples were annealed after oxidation in nitrogen atmosphere. The annealing temperature was varied from 900-1100~ The annealing time was 30 s. The oxide thickness was measured by a Gaertner ellipsometer using the oxide refractive index of 1.465. The metal gate was aluminum deposited by dc-magnetron sputtering. The gate area was 7 • 10 -~ cm 2. All measurements were done at room temperature. ResultsThe current-voltage (I-V) characteristics were measured with gate negatively biased. It was observed that current increases sharply for the electric fields higher than about 6 MV/cm. The electric field is calculated by dividing the applied gate voltage to the oxide thickness taking into consideration the flatband voltage between Si and gate. Similar observation has been made by Baglee 8 and Shih et al. 9The sharp increase of current at higher electric fields is due to the Fowler-Nordheim (FN) tunneling mechanism. This current is characterized by J=aE2 exp (-b) [i]Where J is the current density (A cm-2), E(V cm ~) is the electric field, a and b are constants. The constant b is given by 8~r(2mo) 1/2 me~ 1/2 3/2 b_ (mo) (*1 I21Where mo is the free mass of electron, mo~ is the effective mass of electron in oxide, q is the electron charge, h is the Planck's constant, ...

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Section: Discussionmentioning

confidence: 99%

“…Furthermore, a two-step process where devices sequentially patterned with a thin metal seeding layer are then selectively developed in parallel in a CVD reactor may offer advantages for microelectronics by the reduction of the number of process steps and by the inherent self-alignment. 2 Pure copper has been deposited by CVD from various metalorganic precursors, in particular Cu~R2, where R is generally a ~-diketonate, 3-~5 and Cu~/RL, where R is a ~-diketonate or cyclopentadienyl group and L is a neutral stabilizing ligand (alkene, alkyne, or phosphine). ~623 In most cases, the copper film growth occurred selectively on Some observations however remain incompletely explained, as for instance the fact that the addition of water vapor to the reagent mixture was found to enhance the copper deposition rate from the bis-hexafluoroazetylacetonate Cu(hfa)2 precursor.…”

Section: Institut Lnterddpartemental De Microscopic Electronique Epfmentioning

confidence: 99%

Characterization of Thin SiO2 Grown by Rapid Thermal Processing as Influenced by Processing Parameters

Eftekhari

1993

J. Electrochem. Soc.

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“…Vapor Deposition (CVD) [13,14], Rapid Thermal Oxidation [15], Low Thermal Oxidation [16], and sputtered silicon dioxide deposition [17]. Usually, by using these types of insulation processes, the gate insulator/active layer interface is not of a good quality and therefore some investigations were made in order to improve the surface treatment of the active layer [14,18].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, in the case of LCD-TFTs, gate insulation using a high-temperature thermal oxidation process is not possible. However, alternative technologies can be used, such as chemical vapour deposition (CVD) [13,14], rapid thermal oxidation [15], low thermal oxidation [16] and sputtered silicon dioxide deposition [17]. Usually, by using these types of insulation processes, the gate insulator/active layer interface is not of good quality and therefore some investigations were made in order to improve the surface treatment of the active layer [14,18].…”

Section: Introductionmentioning

confidence: 99%

Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

Pichon

Mourgues

Raoult

et al. 2001

Semicond. Sci. Technol.

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High-mobility low-temperature ( 600 • C) unhydrogenated in situ doped polysilicon thin film transistors (TFTs) are made. Polysilicon layers are grown by a low pressure chemical vapour deposition (LPCVD) technique and crystallized in a vacuum by thermal annealing. The source and drain regions are in situ doped. The gate insulator is made of an atmospheric pressure chemical vapour deposition (APCVD) silicon dioxide. Hydrogen passivation is not performed on the transistors. One type of transistor is made of two polysilicon layers, the other one is fabricated from a single polysilicon layer. The electrical properties are better for transistors made of a single polysilicon layer: a low threshold voltage (1.2 V), a subthreshold slope S = 0.7 V/dec, a high field effect mobility (≈100 cm 2 V −1 s −1 ) and an on/off-state current ratio higher than 10 7 for a drain voltage V ds = 1 V. At low drain voltage, for both transistors, the off-state current results from a pure thermal emission of trapped carriers. However, at high drain voltage, the electrical behaviour is different: in the case of single polysilicon TFTs, the current obeys the field-assisted (Poole-Frenkel) thermal emission model of trapped carriers while for TFTs made of two polysilicon layers, the higher off-state current results from a field-enhanced thermal emission.

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“…However, alternative technologies can be used, such as chemical vapour deposition (CVD) [13,14], rapid thermal oxidation [15], low thermal oxidation [16] and sputtered silicon dioxide deposition [17]. Usually, by using these types of insulation processes, the gate insulator/active layer interface is not of good quality and therefore some investigations were made in order to improve the surface treatment of the active layer [14,18].…”

Section: Introductionmentioning

confidence: 99%

Brauer Groups of Fields of Invariants of Algebraic Groups

Bogomolov¹

1990

Math. USSR Sb.

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Highly Reliable Thin Silicon Dioxide Layers Grown on Heavily Phosphorus Doped Poly‐Si by Rapid Thermal Oxidation

Cited by 17 publications

References 15 publications

Characterization of Thin SiO2 Grown by Rapid Thermal Processing as Influenced by Processing Parameters

Characterization of Thin SiO2 Grown by Rapid Thermal Processing as Influenced by Processing Parameters

Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

Brauer Groups of Fields of Invariants of Algebraic Groups

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