Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation

Itaya, Kazuhiko; Ishikawa, Masayuki; Nitta, Koichi; Okajima, M.; Hatakoshi, Gen–ichi

doi:10.1143/jjap.30.l590

Cited by 12 publications

(3 citation statements)

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“…3,4) Expanding the optical near field in the direction perpendicular to the growth plane produced a reduced beam divergence angle of the far-field beam profile, because it decreased optical confinement in the same direction. 5) In addition, due to the decrease in the optical density because of the expanded optical near field, the catastrophic optical damage (COD) level was increased.…”

Section: Introductionmentioning

confidence: 99%

“…As an alternative approach to high-power operation, it is also very effective to reduce the beam divergence angle and the optical coupling loss between the LD and the objective lens in optical disc systems. 3,4) Expanding the optical near field in the direction perpendicular to the growth plane produced a reduced beam divergence angle of the far-field beam profile, because it decreased optical confinement in the same direction. 5) In addition, due to the decrease in the optical density because of the expanded optical near field, the catastrophic optical damage (COD) level was increased.…”

Section: Introductionmentioning

confidence: 99%

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Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs

Cho

Lee

et al. 2006

jjap

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Very efficient and reliable GaInP/AlGaInP red multiple-quantum-well laser diodes for recordable/rewritable digital versatile disc (DVD-R/RW) were successfully developed by low-damage fabrication. Because we adopted dry etching instead of conventional chemical wet etching for the steep ridge sidewalls of laser diodes (LDs), devices could be operated at a high output power over 200 mW at 70 C without showing any unstable higher-order transverse modes. In-situ monitoring tools in metal organic chemical vapor deposition (MOCVD) and dry etching were useful for controlling process parameters precisely, which enhances device characteristics and maintains the reproducibility of device fabrication. A very small beam aspect ratio of 1.78 with a very low vertical beam divergence angle of 15.3 at a high output power was achieved by optimizing the twostep n-cladding layer in our LD structures. These low values of the vertical beam divergence angle and aspect ratio are essential for minimizing the coupling loss between the LD and the objective lens in DVD pickups.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs

Cho

Lee

et al. 2006

jjap

View full text Add to dashboard Cite

show abstract

“…The weak optical confinement in the vertical direction by expanding optical near field was very effective for reducing the beam divergence angle of far-field beam profile (full-width-at-half-maximum) and improving optical coupling between LDs and optical components in pickup systems [2]. In order to reduce vertical beam divergence angle, the methods of employing an asymmetric cladding layer in which an n-cladding layer has a different refractive index from that of a p-cladding layer were proposed and analyzed for 660-nm AlGaInP LDs [3].…”

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confidence: 99%