Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Yang, Xiangdong; Li, Jia; Song, Rong; Zhao, Bei; Tang, Jingmei; Kong, Lingan; Huang, Hao; Zhang, Zhengwei; Liao, Lei; Liu, Yuan; Duan, Xiangfeng; Duan, Xidong

doi:10.1038/s41565-023-01342-1

Cited by 58 publications

(26 citation statements)

References 56 publications

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“…Notably, this physical transfer process avoids the process of conventional lithography and metal electrode deposition operated onto the MoS 2 channel, thus preventing possible damage to the MoS 2 contact area, which would facilitate improvement of device performance. We note that, for such a vdW transfer process, the development of a reproducible integrated scale-up approach is crucial for its practical applications, which has been demonstrated by designing a quartz/polydimethylsiloxane semirigid stamp recently . Especially, except for the electrode transfer process, the synthesis of a high-quality and large-area metal film such as ZrTe 2 in our case is also vital for its feasibility, which deserves further systematic investigation.…”

mentioning

confidence: 88%

“…We note that, for such a vdW transfer process, the development of a reproducible integrated scale-up approach is crucial for its practical applications, which has been demonstrated by designing a quartz/polydimethylsiloxane semirigid stamp recently. 21 Especially, except for the electrode transfer process, the synthesis of a high-quality and large-area metal film such as ZrTe 2 in our case is also vital for its feasibility, which deserves further systematic investigation. As for the scaling potential verification of the exfoliated vdW bulk materials, further fabrication of the complex structured devices by some way to etch and transfer the exfoliated ZrTe 2 -based contacts deserves further investigation.…”

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confidence: 96%

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ZrTe₂ Compound Dirac Semimetal Contacts for High-Performance MoS₂ Transistors

Wen,

Lei,

et al. 2023

Nano Lett.

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Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of approaching the quantum limit in two-dimensional (2D) semiconductor contacts, implying it might be an optimal option to solve the contact issue of 2D semiconductor electronics. Here, we demonstrate novel compound Dirac semimetal ZrTe 2 contacts to MoS 2 constructed by a nondestructive van der Waals (vdW) transfer process, exhibiting excellent ohmic contact characteristics with a negligible Schottky barrier. The band hybridization between ZrTe 2 and MoS 2 was verified. The bilayer MoS 2 transistor with a 250 nm channel length on a 20 nm thick hexagonal boron nitride (h-BN) exhibits an I ON /I OFF current ratio over 10 5 and an on-state current of 259 μA μm −1 . The current results reveal that 2D compound semimetals with vdW contacts can offer a diverse selection of proper semimetals with adjustable work functions for the next-generation 2Dbased beyond-silicon electronics.

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confidence: 88%

mentioning

confidence: 96%

ZrTe₂ Compound Dirac Semimetal Contacts for High-Performance MoS₂ Transistors

Wen,

Lei,

et al. 2023

Nano Lett.

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“…However, better performance was achieved recently on α-In 2 Se 3 -based ferroelectric FET by introducing 10 nm Al 2 O 3 as a passivation layer, and the highest carrier mobilities could reach up to 312 cm 2 V –1 s –1 , which is much higher than our result or previously reported other results. , The low carrier mobilities may be ascribed to the following reasons: First, the nonohmic contact between Ni and α-In 2 Se 3 may lower the carrier mobility in the device. Second, as introduced in the Experimental Section, the source/drain electrodes were fabricated using magnetron sputtering, which may cause undesired damage and contamination to the atomically thin lattices, thus degrading the device’s performance. − Third, it is well known that mechanical exfoliation can usually produce more perfect 2D materials than CVD or PVD methods. This may also lead to lower carrier mobility compared with the devices fabricated by mechanically exfoliated α-In 2 Se 3 .…”

Section: Resultsmentioning

confidence: 99%

α-In₂Se₃ Nanostructure-Based Photodetectors for Tunable and Broadband Response

Zhang,

Su,

Zhang

et al. 2023

ACS Appl. Nano Mater.

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The strong thickness-dependent narrow direct band gap of few-layer α-In2Se3 makes it a promising candidate for high-performance photodetectors. However, few researchers focus on the relationship between thickness and optoelectronic characteristics, and most results are based on the mechanically exfoliated α-In2Se3 nanoflakes. Herein, a reliable physical vapor deposition strategy to grow α-In2Se3 nanosheets with tunable thickness and submillimeter scale is reported. High-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) studies confirmed the high-quality growth of α-In2Se3 nanosheets. The back-gate field-effect transistors on SiO2 substrates display n-type semiconductor behavior. A systematical investigation of the optoelectronic properties reveals a thickness-dependent broadband response from visible (447 nm) to near-infrared (1550 nm) wavelengths with better and excellent performance obtained in thicker α-In2Se3 nanosheets than that in thinner devices. More importantly, a great improvement of the responsivity, detectivity, and external quantum efficiency (EQE) can be achieved by changing the thickness of In2Se3. The photodetector exhibits an outstanding photoresponsivity of 347.6 A/W, an ultrahigh detectivity of 1.5 × 1013 Jones, and an external quantum efficiency of 8.3 × 104%, which is superior to several α-In2Se3 nanostructure- or other two-dimensional (2D)-based photodetectors. The thickness-dependent broadband response characteristics make the α-In2Se3 nanostructure a promising candidate for multifunctional optoelectronic device applications.

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Section: Process Integration Of 2dms In Device Levelmentioning

confidence: 99%

Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration

Sheng,

Dong,

Zhu

et al. 2023

Adv Funct Materials

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The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have garnered significant interest in circuit applications. Researchers have developed circuits based on wafer‐level 2DM fabrication and monolithic integration in the laboratory. Numerous studies have been conducted on discrete device processes; however, circuit manufacturing is a multifaceted and methodical engineering process that demands seamless integration of multiple procedures. Notably, the optimization of crucial processes holds paramount significance in achieving expected results. This review presents the existing research on process integration of 2DM devices and circuit applications. The selection of suitable 2DMs for circuit applications is outlined, considering their excellent theoretical properties and feasible high‐quality growth processes. Drawing on highly mature semiconductor manufacturing process, while incorporating customized key processes, 2DM devices have the potential to strongly compete with, and even outperform, the conventional devices. Finally, the recent circuit applications of 2DMs are also discussed in detail. 2DM integrated circuits (2DM ICs) are now being practically applied in advanced manufacturing, transitioning from laboratory development to fabrication plant deployment. The implementation of underlying 2DM IC fabrication provides effective and unique solutions for More Moore, More than Moore, and Beyond CMOS technology routes.

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Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Cited by 58 publications

References 56 publications

ZrTe₂ Compound Dirac Semimetal Contacts for High-Performance MoS₂ Transistors

ZrTe₂ Compound Dirac Semimetal Contacts for High-Performance MoS₂ Transistors

α-In₂Se₃ Nanostructure-Based Photodetectors for Tunable and Broadband Response

Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration

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Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Cited by 58 publications

References 56 publications

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors

α-In2Se3 Nanostructure-Based Photodetectors for Tunable and Broadband Response

Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration

Contact Info

Product

Resources

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ZrTe₂ Compound Dirac Semimetal Contacts for High-Performance MoS₂ Transistors

ZrTe₂ Compound Dirac Semimetal Contacts for High-Performance MoS₂ Transistors

α-In₂Se₃ Nanostructure-Based Photodetectors for Tunable and Broadband Response