Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

Kim, Dong-Gyu; Choi, Su-Hwan; Lee, Won-Bum; Jeong, Gyeong Min; Koh, Jihyun; Lee, Seunghee; Kuh, Bongjin; Park, Jin-Seong

doi:10.1002/sstr.202300375

Cited by 7 publications

(1 citation statement)

References 55 publications

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“…As such, ALD is a viable choice for growing amorphous conducting oxides. Common amorphous TCOs grown by ALD include, indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), , indium zinc tin oxide (IZTO), , and hafnium aluminum zinc oxide (HAZO) . Sheng et al grew 40 nm amorphous IGO and IZO thin films at 200 °C that exhibited high charge carrier mobilities of 35 and 20 cm 2 V –1 s –1 , respectively, that were used as active layers in thin-film transistors. , In 2019, the same group fabricated indium gallium zinc oxide (IGZO) by plasma-enhanced atomic layer deposition.…”

Section: Introductionmentioning

confidence: 99%

Crystallization Disruption via Atomic Layer Deposition Substitutional Dopant Scheduling: High-Mobility Amorphous Indium Zinc Tin Oxide

Muir,

Kupferberg,

Jones

et al. 2024

ACS Appl. Opt. Mater.

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Transparent conducting oxides (TCOs) are widely used in thin film transistors (TFTs), displays, window coatings, and solar energy conversion applications, with varying demands on mobility, conductivity, transparency, and roughness. We investigate supercycle atomic layer deposition (ALD) dosing strategies that achieve high electron mobility while inhibiting the crystallization of In 2 O 3 -based TCOs and producing smoother films. ALD In 2 O 3 layers (A) of varying thickness are separated by a single cycle of ALD ZnO (B) or SnO 2 (C). The resulting quaternary indium zinc tin oxide (IZTO) thin film properties depend strongly on the A N :B:A N :C structure, where "N" varies from 1 to 9 In 2 O 3 ALD cycles. The IZTO thin films remain amorphous for N < 8 or 4 sequential In 2 O 3 layers at deposition temperatures of 150 or 175 °C, respectively. The highest conductivity and carrier mobility for amorphous films, 1.6 × 10 −3 Ωcm and 50−55 cm 2 V −1 s −1 respectively, are observed nearest the crystallization transition. This dilute substitution strategy produces carrier mobilities among the highest reported for amorphous indium-based materials fabricated by ALD and comparable to those of crystalline ALD indium tin oxide (ITO).

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Section: Introductionmentioning

confidence: 99%

Crystallization Disruption via Atomic Layer Deposition Substitutional Dopant Scheduling: High-Mobility Amorphous Indium Zinc Tin Oxide

Muir,

Kupferberg,

Jones

et al. 2024

ACS Appl. Opt. Mater.

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Flexible IGZO TFT Technology for Shift Register Drivers

Bao,

Karnaushenko,

et al. 2024

Adv Elect Materials

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Active sensing matrices play a pivotal role in various electronic devices, including optical and X‐ray imaging arrays, electronic skins, and artificial tactile arrays, among others. These matrices function through a thin‐film active switching mechanism, allowing for the scanning of rows and columns by external circuitry to read the sensory signals of individual pixels. Recently, indium–gallium‐zinc oxide thin‐film transistors (IGZO TFTs) have emerged as highly promising technology in the realm of flexible electronics. They enable the large‐scale integration of functional circuits on flexible substrates. Shift registers are commonly employed as peripheral scanning circuits to sequentially address active‐matrix arrays. To enhance system compactness and minimize external electrical connections, it is imperative to seamlessly integrate shift registers within the active matrices. However, contemporary flexible IGZO‐based shift registers suffer from high operating voltages and low frequencies, which constrain their applicability in high‐performance flexible sensors and displays. In response to this challenge, a breakthrough is presented in the form of low‐voltage, high‐frequency bootstrap shift registers implemented with flexible IGZO technology. The approach involves utilizing SU‐8 buffered polyimide (PI) polymer foils as substrates. These foils boast an exceptional level of surface smoothness, significantly increasing the yield and performance of electronic components, including vias, IGZO TFTs, and capacitors used in the shift register circuitry. Additionally, HfO2/Al2O3/HfO2 sandwich structures are employed as high‐k dielectric layers to reduce the operational voltage. Thanks to the innovative circuit design and optimized fabrication methods, the 16‐stage shift register can operate at just 1.8 V with a frequency of 15 kHz. This breakthrough promises to have a profound impact on a wide range of applications for driving flexible active‐matrix electronic systems.

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Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Choi,

Sim,

Shin

et al. 2024

Small Structures

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Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the impossibility of the erase operation. To address these drawbacks, herein a hybrid‐channel structure comprising heterostacked poly‐Si and In–Ga–O (IGO) is developed. IGO is used as the main channel to achieve thermal stability above 800 °C, and the fabrication process is optimized to achieve superior electrical properties (μFE = 103.66 cm2 V−1 s−1, subtreshold swing = 96 mV decade−1) and reliability (0.07 V positive shift during the positive bias temperature stress of 3 MV cm−1 at 100 °C for almost 3 h). Poly‐Si is used to generate the gate‐induced drain leakage current and enable the erase operation. The developed structure is used to fabricate 2D planar and three‐layer stacked 3D NAND flash memories. The superior electrical properties (μFE = 116.08 cm2 V−1 s−1, Ion = 4.73 μA μm−1) and deviations of the hybrid‐channel NAND memory are comparable with those of its OS‐channel counterpart. The use of the hybrid‐channel structure in the NAND memories enables the realization of the erase operation with a large memory window (≈3.60 V).

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Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

Cited by 7 publications

References 55 publications

Crystallization Disruption via Atomic Layer Deposition Substitutional Dopant Scheduling: High-Mobility Amorphous Indium Zinc Tin Oxide

Crystallization Disruption via Atomic Layer Deposition Substitutional Dopant Scheduling: High-Mobility Amorphous Indium Zinc Tin Oxide

Flexible IGZO TFT Technology for Shift Register Drivers

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

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