Highly Robust Transparent and Conductive Gas Diffusion Barriers Based on Tin Oxide

Abstract

Transparent and electrically conductive gas diffusion barriers are reported. Tin oxide (SnOx ) thin films grown by atomic layer deposition afford extremely low water vapor transmission rates (WVTR) on the order of 10(-6) g (m(2) day)(-1) , six orders of magnitude better than that established with ITO layers. The electrical conductivity of SnOx remains high under damp heat conditions (85 °C/85% relative humidity (RH)), while that of ZnO quickly degrades by more than five orders of magnitude.

Impermeable Charge Transport Layers Enable Aqueous Processing on Top of Perovskite Solar Cells

“…Please note the drop of water shows some better wetting on top of the hydrophilic ALD layer, but neither the optical image nor XRD indicate the presence of PbI 2 after the drop has dried. Previously, we have quantified the water vapor transmittance rate (WVTR) of similar ALD‐grown SnO x layers to be on the order of 10 −5 g m −2 d −1 , which is comparable to that of excellent permeation barriers used for the encapsulation of organic electronics …”

Suppressed decomposition of organometal halide perovskites by impermeable electron-extraction layers in inverted solar cells

“…At a substrate temperature of 80 °C the growth rate per cycle was 1.1 Å. Further details on the materials properties of the SnO x can be found in our earlier work2327. Ag (100 or 10 nm) layers were thermally evaporated in high vacuum (10 −7  mbar).…”

“…However, these ALD layers were not a functional part of a device, and therefore most of the experiments were based on electrical insulators like Al 2 O 3 . SnO x layers grown by ALD are optically highly transparent, electrically conductive and provide outstanding gas permeation barrier properties with a water vapour transmission rate as low as 7 × 10 −5  g (m −2  day −1 ), even when grown at a low temperature23. Their water vapour transmission rate is orders of magnitude better than that of sputtered ITO thin films or that of solution processed metal oxide layers.…”

Spin Self‐Assembled Clay Nanocomposite Passivation Layers Made from a Photocrosslinkable Poly(vinyl alcohol) and Na+‐Montmorillonite Enhance the Environmental Stability of Organic Thin‐Film Transistors

“…[10,11] Several passivation approaches for OTFTs using organic and inorganic materials have been reported. [8,13] Other inorganic (SnO 2 , [14] Al 2 O 3 [15] ) and organic (tetratetracontane) [16] passivation materials for OTFTs based on the vacuum process have also been reported. [12] Until now, the soluble organic material used for OTFT passivation (as the first passivation layer in contact with the semi-conducting layer) has been water-based PVA, because only polar protic solvents like water may less damage the crystalline structure of organic semiconductor layers.…”