The area of thin-film photovoltaics has been overwhelmed by organometal halide perovskites. Unfortunately, serious stability concerns arise with perovskite solar cells. For example, methyl-ammonium lead iodide is known to decompose in the presence of water and, more severely, even under inert conditions at elevated temperatures. Here, we demonstrate inverted perovskite solar cells, in which the decomposition of the perovskite is significantly mitigated even at elevated temperatures. Specifically, we introduce a bilayered electron-extraction interlayer consisting of aluminium-doped zinc oxide and tin oxide. We evidence tin oxide grown by atomic layer deposition does form an outstandingly dense gas permeation barrier that effectively hinders the ingress of moisture towards the perovskite and—more importantly—it prevents the egress of decomposition products of the perovskite. Thereby, the overall decomposition of the perovskite is significantly suppressed, leading to an outstanding device stability.

No abstract

Semitransparent perovskite solar cells (PSCs) are of interest for application in tandem solar cells and building-integrated photovoltaics. Unfortunately, several perovskites decompose when exposed to moisture or elevated temperatures. Concomitantly, metal electrodes can be degraded by the corrosive decomposition products of the perovskite. This is even the more problematic for semitransparent PSCs, in which the semitransparent top electrode is based on ultrathin metal films. Here, we demonstrate outstandingly robust PSCs with semitransparent top electrodes, where an ultrathin Ag layer is sandwiched between SnO x grown by low-temperature atomic layer deposition. The SnO x forms an electrically conductive permeation barrier, which protects both the perovskite and the ultrathin silver electrode against the detrimental impact of moisture. At the same time, the SnO x cladding layer underneath the ultra-thin Ag layer shields the metal against corrosive halide compounds leaking out of the perovskite. Our semitransparent PSCs show an efficiency higher than 11% along with about 70% average transmittance in the near-infrared region (λ > 800 nm) and an average transmittance of 29% for λ = 400-900 nm. The devices reveal an astonishing stability over more than 4500 hours regardless if they are exposed to ambient atmosphere or to elevated temperatures.

Transparent and electrically conductive gas diffusion barriers are reported. Tin oxide (SnOx ) thin films grown by atomic layer deposition afford extremely low water vapor transmission rates (WVTR) on the order of 10(-6) g (m(2) day)(-1) , six orders of magnitude better than that established with ITO layers. The electrical conductivity of SnOx remains high under damp heat conditions (85 °C/85% relative humidity (RH)), while that of ZnO quickly degrades by more than five orders of magnitude.