Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization

Seo, Eun-Bin; Park, Jea‐Gun; Bae, Jae‐Young; Park, Jin-Hyung

doi:10.3938/jkps.76.1127

Cited by 9 publications

(2 citation statements)

References 14 publications

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“…The results shown that, compared with Fe(NO 3 ) 3 catalyst, the novel nonionic, thermally activated FeSi nanocatalyst has higher W RR [53]. Malic acid is usually used as a pH regulator or chelating agent, and it also has the advantage of highly selective polishing in the CMP of W film and SiO 2 film [42].…”

Section: Steelmentioning

confidence: 99%

A review: green chemical mechanical polishing for metals and brittle wafers

Liu¹,

Zhang²,

Wu³

et al. 2021

J. Phys. D: Appl. Phys.

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Chemical mechanical polishing (CMP) is the most effective technique to obtain global and local planarization of metal and brittle surfaces. Conventionally, CMP slurries contain strong acids, alkalis, or hazardous chemicals, which easily cause widespread environmental pollution and are harmful to the operators. It is a challenge to develop a novel green CMP slurry with eco-friendly and non-toxic compositions. Some substances with special structures contain versatile functional groups and have unique physical and chemical properties, including excellent chelating ability, ionization activity, biocompatibility and biodegradability, which have attracted the interest of CMP processing techniques. Therefore, researchers have begun to explore CMP slurries composed of environmentally friendly compositions. This review discussed the latest developments in the field of green CMP of metals and brittle wafers. The research on green CMP slurries was summarized and the future of the field was discussed.

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Section: Steelmentioning

confidence: 99%

A review: green chemical mechanical polishing for metals and brittle wafers

Liu¹,

Zhang²,

Wu³

et al. 2021

J. Phys. D: Appl. Phys.

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“…However, due to the low fracture toughness [ 3 ], the machining process of quartz glass leads to defects such as chipping, cracking, scratching, and sub-surfacing [ 4 ]. To meet the high surface-quality requirement of optical components, processing techniques such as magneto-rheological polishing (MRF) [ 5 , 6 ], jet polishing (JP) [ 7 ], ion beam polishing (IBP) [ 8 , 9 ], and chemical mechanical polishing (CMP) [ 10 , 11 , 12 ] are preferred. CMP can effectively reduce surface roughness (S a ) while eliminating sub-surface damage and has become preferable in the wafer processing industry due to its relatively low cost and simple operation.…”

Section: Introductionmentioning

confidence: 99%

Dispersion and Polishing Mechanism of a Novel CeO2-LaOF-Based Chemical Mechanical Polishing Slurry for Quartz Glass

Zhang

Shi

et al. 2023

Materials

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Quartz glass shows superior physicochemical properties and is used in modern high technology. Due to its hard and brittle characteristics, traditional polishing slurry mostly uses strong acid, strong alkali, and potent corrosive additives, which cause environmental pollution. Furthermore, the degree of damage reduces service performance of the parts due to the excessive corrosion. Therefore, a novel quartz glass green and efficient non-damaging chemical mechanical polishing slurry was developed, consisting of cerium oxide (CeO2), Lanthanum oxyfluoride (LaOF), potassium pyrophosphate (K4P2O7), sodium N-lauroyl sarcosinate (SNLS), and sodium polyacrylate (PAAS). Among them, LaOF abrasive showed hexahedral morphology, which increased the cutting sites and uniformed the load. The polishing slurry was maintained by two anionic dispersants, namely SNLS and PAAS, to maintain the suspension stability of the slurry, which makes the abrasive in the slurry have a more uniform particle size and a smoother sample surface after polishing. After the orthogonal test, a surface roughness (Sa) of 0.23 nm was obtained in the range of 50 × 50 μm2, which was lower than the current industry rating of 0.9 nm, and obtained a material removal rate (MRR) of 530.52 nm/min.

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