In tungsten(W)-film chemical-mechanical-planarization(CMP), Fenton reaction between ferric-based-catalyst and oxidant hydrogen peroxide (H2O2) enhances the chemical-oxidation degree of the W-film surface and degrades the abrasive stability of a W-film CMP-slurry as a trade-off effect. The addition of a scavenger (i.e., trilithium citrate tetrahydrate: TCT–Li) in the W-film CMP-slurry improved significantly the abrasive stability. A ionized scavenger (i.e., citrate ions) produced a Fe(III)-citrate complex and chemically reacted with the reactive radicals (i.e., OH·, HO2· and O2·−), depressing Fenton reaction in a ferric-catalyst-based W-film CMP-slurry. Hence, the abrasive stability of the W-film CMP-slurry was improved with the scavenger concentration. In addition, TCT–Li influenced mainly the chemical properties such as the chemical-oxidation degree for the W-film surface and the hydrolysis degree of the SiO2-film surface. Thus, the W-film polishing-rate slightly decreased with the scavenger concentration while the SiO2-film peaked at a specific scavenger concentration (i.e., 0.1-wt%). In addition, two chemical reaction regions were found; i.e., the scavenger-concentration dominant chemical-reaction at the region I (i.e., TCT–Li 0 ∼ 0.1 wt%) and the catalyst [i.e., Fe(NO3)3]-concentration dominant chemical-reaction at the region II (i.e., TCT–Li 0.1 ∼ 0.3 wt%). The region I showed more strongly a chemical-dominant-reaction than the region II, determining the W- and SiO2-film polishing-rate.

The chemical-mechanical-planarization (CMP) of the Ge-doped SbTe (Ge-ST) film deposited by atomic layer deposition (ALD) is essentially necessary for 3-dimensional (3D) cross-point phase-change-memory (PCM) array, producing indispensably the surface-tensile-stress inducing polishing-voids due to the corrosion of the Ge-ST film and structural tensile stress in the confined memory-cells with ∼20-nm-diameter. The oxidizer (i.e., H2O2) in a CMP slurry played an important role to suppress the generation of the polishing voids via strong chemical oxidation of Sb2O5 and TeO2 of the Ge-ST film surface to avoid a corrosion process during CMP. The suppression efficiency of the polishing voids greatly depended on the H2O2 concentration in a ALD Ge-ST-film CMP of the confined memory-cell array; i.e., the polishing voids could disappear completely greater than a specific H2O2 concentration (i.e., 4wt%).

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Ceria (CeO2) was demonstrated to have the highest polishing rate of glass than the other ceramic oxides by Cook [1] in 1990. Since then CeO2 particle was increasingly applied as the abrasive in chemical mechanical planarization (CMP) of the SiO2 and Si3N4 based dielectric materials. At present, the share of the CeO2 slurry has grown to the second largest part in the CMP slurry market just next to the silica slurry. However, the price of precursor of CeO2 synthesis, as one of the rare earth materials, rose significantly as long as the export quota was restricted for the political policy by the rare earth material exporting countries [2]. This rise in price would have direct influence on the cost of ownership and the profit margin of the semiconductor manufacturing companies. Therefore, an alternative is required to totally or partially replace the CeO2 slurry in the present dielectric CMP application. ZrO2 and TiO2 had the second and third high polishing rates in the Cook’s report. However, the extremely high mechanical hardness of ZrO2 prohibited its potential application in the dielectric CMP due to the concern of producing scratches. TiO2 has the moderate mechanical hardness and applied in large number of applications including food, cosmetic, catalyst, and paint [3]. Therefore, the annual production capacity and the price would be more stable than that of the rate earth materials. For this reason, we investigated the SiO2 CMP using the TiO2particle in the study. Figure 1 shows the Transmission Electron Microscopy of the TiO2 particle used in the study. We used commercially available TiO2(P25, Degussa, Germany) nanoparticles. Degussa P25 consists of two crystal forms of rutile and anatase, and is widely used in photocatalytic degradation studies, because of its chemical stability, ready availability, reproducibility, and activity as a catalyst in oxidation processes [4]. Figure 2 indicates the polishing rate of SiO2 film in the TiO2 slurry as a function of the added polyacrylic acid (PAA) concentration. The polishing rate was below 200 Å/min in the TiO2 slurry. However, it increased suddenly approximately to 700 Å/min as the PAA concentration increased to 0.025 wt%. Surprisingly, the polishing rate abruptly dropped below 100 Å/min as the PAA concentration increased by 0.005 wt% to 0.03 wt%. The dispersion stability of the TiO2slurry was good as long as the PAA concentration was over 0.02 wt%. Therefore, the poor dispersion stability can explain the low polishing rate at the PAA concentration that was lower than that of the critical point. However, the dispersion stability was failed to explain the abrupt decrease in the polishing rate over 0.03 wt% of PAA. Figure 3 shows the viscosity of the TiO2 slurry as a function of the PAA concentration. Each slurry shows the shear thining behavior as the sear rate increases due to the structural rearrange of the adsorbed PAA on the TiO2 particle. The magnitude of the viscosity shows a totally inverse trend as that of the polishing rate as a function of PAA concentration. The adsorbed PAA on the TiO2particle probably undergoes a structural change as the PAA concentration over the critical concentration of 0.025 wt%. Therefore, the abruptly decreased polishing rate would be resulted from this structural change. The TiO2 slurry showed a moderate polishing rate of SiO2 with PAA only in a very narrow concentration range. Therefore, we need more investigation to understand the CMP mechanism of the TiO2 slurry and find out a more effective additive to increase the polishing rate of SiO2 in order to satisfy at least the same polishing performance as the CeO2 slurry.