2015
DOI: 10.1016/j.snb.2015.04.057
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Highly selective ppb-level detection of NH3 and NO2 gas using patterned porous channels of ITO nanoparticles

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Cited by 20 publications
(13 citation statements)
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“…As a result, the resistance of Co 3 O 4 /SnO 2 increased greatly (Figure S8a). However, when the gas sensor was exposed to NH 3 , the subsequent reaction releases electrons (2NH 3 + 3O – → N 2 + 3H 2 O + 3e – ) , into the conduction bands of SnO 2 and Co 3 O 4 , reducing the width of the depletion layer and decreasing the height of the potential barrier and resulting in a decrease of the resistance of Co 3 O 4 /SnO 2 -based gas sensors (Figure S8b). , Thus, the fabrication of hybrid composite materials with a unique structure is an effective strategy to improving the gas-sensor performance.…”
Section: Results and Discussionmentioning
confidence: 99%
“…As a result, the resistance of Co 3 O 4 /SnO 2 increased greatly (Figure S8a). However, when the gas sensor was exposed to NH 3 , the subsequent reaction releases electrons (2NH 3 + 3O – → N 2 + 3H 2 O + 3e – ) , into the conduction bands of SnO 2 and Co 3 O 4 , reducing the width of the depletion layer and decreasing the height of the potential barrier and resulting in a decrease of the resistance of Co 3 O 4 /SnO 2 -based gas sensors (Figure S8b). , Thus, the fabrication of hybrid composite materials with a unique structure is an effective strategy to improving the gas-sensor performance.…”
Section: Results and Discussionmentioning
confidence: 99%
“…The surrounding OTS regions are non-polar due to the methyl terminals of the OTS molecules. The NWs are thought to get adsorbed only on the polar SiO 2 regions by van der Waals interaction [40]. The selective assembly of ZnO NWs was also confirmed with energy-dispersive X-ray spectroscopy (EDS) (see Additional file 1: Figure S2).…”
Section: Resultsmentioning
confidence: 81%
“…The NWs were dispersed to 1 wt% concentration in dichlorobenzene (DCB) by sonication for 3 s. For preparing the molecularly patterned substrates, photoresist (AZ 5214E) was patterned on SiO2 (300-nm-thick SiO2 on 500-μm-thick p-doped Si wafer) substrate by typical photolithography method. Then, the substrate was dipped into 1:500 v / v octadecyltrichlorosilane (OTS) in hexane about 3 min [40]. During this process, a monolayer of OTS molecules was self-assembled on the surface of the exposed SiO 2 region to create a non-polar OTS region.…”
Section: Methodsmentioning
confidence: 99%
“…Direct ammonia slip is another technological threat, which requires NH 3 detection in air in a wide range of concentrations . The applicability of semiconductor metal oxides for these purposes has been demonstrated . However, practical implementation of such sensors is hampered by the instability of response and the influence of interfering gases.…”
Section: Introductionmentioning
confidence: 99%