Highly Sensitive Direct‐Conversion Vacuum Flat‐Panel X‐Ray Detectors Formed by Ga₂O₃‐ZnO Heterojunction Cold Cathode and ZnS Target and their Photoelectron Multiplication Mechanism

Abstract

2102268 (2 of 8) www.advmatinterfaces.de Figure 6. Charge transportation mechanism of the proposed X-ray detectors. a) Equilibrium state without applied voltage. b) Field emission in the dark. c) Field emission under X-ray illumination.

Charge Neutral Point Shift of a 700 nm-Thick α-Ga2O3 Thin-Film Detector under Soft X-ray Irradiation

“…Of these, monoclinic β-Ga 2 O 3 is known to be the most stable phase, while corundum α-Ga 2 O 3 has the largest energy band gap of at 5.3 eV. The largest energy band gap in α-Ga 2 O 3 is inextricably linked to the lower dark current density, making it well suited for X-ray detector applications. , Although several works have been published on Ga 2 O 3 -based soft X-ray detector applications, their scope is mostly limited to the X-ray response. − To realize a Ga 2 O 3 -based X-ray detector, a more detailed analysis, including the transient behavior, is required. The present study investigates the transient behavior of the α - Ga 2 O 3 thin film under soft X-ray irradiation.…”

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga2O3 Heterojunction Channels

“…The photoconductor PD is simple, but the photocurrent of PDs is limited by the mobility of the semiconductors . The photovoltaic PD is built upon the foundation of having an in-built charge separation mechanism and has a faster response time − but the detection signal cannot be amplified. In contrast, a three-terminal phototransistor with one more terminal-gate to flexibly control the carrier transport is attractive for UV PDs. − Although Ga 2 O 3 phototransistor PDs have been demonstrated previously, most of them are based on high-cost mechanical exfoliated single-crystal Cr-doped Ga 2 O 3 .…”