2009
DOI: 10.1016/j.snb.2008.10.046
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Highly sensitive hydrogen sensor based on suspended, functionalized single tungsten nanowire bridge

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Cited by 58 publications
(20 citation statements)
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“…The microelectrodes are fabricated on a heavily doped silicon-on-insulator (SOI) wafer with 50µm device layer and 1µm buried oxide using single photolithography step, deep reactive ion etching (DRIE) and the following wet etching in hydrofluoric acid. Scanning ion microscope (SIM) image in Fig4 (b) shows the nanowire bridge connecting two microelectrodes with bonded aluminum wire for signal measurement (Choi et al, 2009). The nanowire is synthesized by FIB-CVD on microelectrodes and constant current is applied between the microelectrodes and through the nanowire to monitor the voltage drop when it is exposed to hydrogen gas.…”
Section: Applications Of Metal Oxide Nanostructuresmentioning
confidence: 99%
See 1 more Smart Citation
“…The microelectrodes are fabricated on a heavily doped silicon-on-insulator (SOI) wafer with 50µm device layer and 1µm buried oxide using single photolithography step, deep reactive ion etching (DRIE) and the following wet etching in hydrofluoric acid. Scanning ion microscope (SIM) image in Fig4 (b) shows the nanowire bridge connecting two microelectrodes with bonded aluminum wire for signal measurement (Choi et al, 2009). The nanowire is synthesized by FIB-CVD on microelectrodes and constant current is applied between the microelectrodes and through the nanowire to monitor the voltage drop when it is exposed to hydrogen gas.…”
Section: Applications Of Metal Oxide Nanostructuresmentioning
confidence: 99%
“…The nanowire is synthesized by FIB-CVD on microelectrodes and constant current is applied between the microelectrodes and through the nanowire to monitor the voltage drop when it is exposed to hydrogen gas. (b) SIM image of microelectrodes and suspended single tungsten nanowire bridge with bonded aluminum wire (Choi et al, 2009). …”
Section: Applications Of Metal Oxide Nanostructuresmentioning
confidence: 99%
“…In metal-oxide semiconductors, n-type semiconductors based on WO 3 have high sensitivity for (0.5 ppm) NO x gas detection (Takafumi et al 2013;Akiyama et al 1991;Tamaki et al 2008). In the past decade, tungsten-oxide nanostructures (NSs) have been considered as a promising functional material for catalysis and gas-sensing application, because of its photocatalytic, electrochromic, gasochromic and field emission properties (Sawicka et al 2005;Meng et al 2012;Choi and Kim 2009;Serrano et al 2011;Li et al 2001;Liao et al 2006;Luo et al 2009). In WO 3 -based NO 2 gas sensors, the adsorption of NO 2 (oxidizing gases) on the n-type WO 3 modifies the potential barrier between the grain boundaries of WO 3 due to the depletion of charge carriers, leading to a change in electrical conductance (Zhao et al 2000;Teoh et al 2003;Zeng et al 2012).…”
Section: Introductionmentioning
confidence: 99%
“…The sensitivity of SMO sensors is typically enhanced by embedding noble metal catalysts such as Pd and Pt. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] In the recent past, several variants of Pd nanostructures have been developed to enhance the sensitivity of H 2 sensors, with room temperature sensing capability for low power applications. Yang et al 8 have used lithographically patterned Pd nanowire electrodeposition (LPNE) to achieve a room temperature sensitivity of about 1% at 50 ppm.…”
Section: Introductionmentioning
confidence: 99%