2015
DOI: 10.1063/1.4922240
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Suspended core-shell Pt-PtOx nanostructure for ultrasensitive hydrogen gas sensor

Abstract: High sensitivity gas sensors are typically realized using metal catalysts and nanostructured materials, utilizing non-conventional synthesis and processing techniques, incompatible with on-chip integration of sensor arrays. In this work, we report a new device architecture, suspended core-shell Pt-PtOx nanostructure that is fully CMOS-compatible. The device consists of a metal gate core, embedded within a partially suspended semiconductor shell with source and drain contacts in the anchored region. The reduced… Show more

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Cited by 25 publications
(9 citation statements)
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“…As proved by the XPS results, the peaks of Pt 4+ in the samples including Pt can be observed, indicating that a small amount of PtO 2 is formed. As already known, PtO 2 is a typical p-type material 39 ; this means that p-n junctions formed between In 2 O 3 and PtO 2 . With the formation of the p-n junctions, the carrier densities of the S1-S5 NWs also increase remarkably.…”
Section: Resultsmentioning
confidence: 78%
“…As proved by the XPS results, the peaks of Pt 4+ in the samples including Pt can be observed, indicating that a small amount of PtO 2 is formed. As already known, PtO 2 is a typical p-type material 39 ; this means that p-n junctions formed between In 2 O 3 and PtO 2 . With the formation of the p-n junctions, the carrier densities of the S1-S5 NWs also increase remarkably.…”
Section: Resultsmentioning
confidence: 78%
“…In fact, the binding energies of the Pt 4f XPS peaks derived from Pt 2+ and Pt 4+ , are quite similar to those derived from the PtSi species, Pt 2 Si and PtSi, respectively. , Although we assigned them to Pt 2+ and Pt 4+ and analyzed these peaks, it is more reasonable to conclude the generation of PtSi species than that of PtO x . Thus, the generation of PtO x is attributable to the p-type conduction behavior of PTO on SiO 2 because it has already been reported that PtO x (PtO and PtO 2 ) has the p-type properties. , Although no PtO x was detected by XRD, the existence of PtO x was suggested by XPS, and the prepared PTO was a mixture of Pt and PtO x , in which PtO x dominated the p-type conducting behavior. In contrast, PTO on Si was n-type, which was caused by the presence of Pt and/or PtSi species and by the absence of PtO x .…”
Section: Results and Discussionmentioning
confidence: 90%
“…Thus, the generation of PtO x is attributable to the p-type conduction behavior of PTO SiO 2 because it has already been reported that PtO x (PtO and PtO 2 ) has the ptype properties. 42,43 Although no PtO x was detected by XRD, the existence of PtO x was suggested by XPS, and the prepared PTO was a mixture of Pt and PtO x , in which PtO x dominated the p-type conducting behavior. In contrast, PTO on Si was ntype, which was caused by the presence of Pt and/or PtSi species and by the absence of PtO x .…”
Section: Chemistry Of Materialsmentioning
confidence: 99%
“…In particular, the C 1s peak comes from the sample holder. In the high-resolution XPS (Figure 4b), the Pt 4f 7/2 and Pt 4f 5/2 peaks at 75.0 and 78.3 eV, respectively, are ascribed to the chemical state of Pt 4+ , 10,34 further proving the formation of PtO 2 on the surface of PtO 2 / ZnO-30. After H 2 treatment, the PtO 2 nanoparticles can be reduced to metallic state Pt particles.…”
Section: ■ Results and Discussionmentioning
confidence: 91%