Highly sensitive palladium oxide thin film extended gate FETs as pH sensor

Das, Anjana; Ko, Danny Hsu; Chen, Chia-Hsin; Chang, Liann‐Be; Lai, Chao−Sung; Chu, Fu-Chuan; Chow, Lee; Lin, Ray-Ming

doi:10.1016/j.snb.2014.08.057

Cited by 134 publications

(83 citation statements)

References 31 publications

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“…Therefore, the majority of works using EGFET as part of a sensor describes it as a pH-sensor 3,[18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] . PH monitoring and control, for itself, are quite important.…”

mentioning

confidence: 99%

Mechanisms of Ion Detection for FET-Sensors Using FTO: Role of Cleaning Process, pH Sequence and Electrical Resistivity

Nascimento

Mulato

2017

Mat. Res.

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The use of FTO samples as an extended gate field effect transistor biosensor is presented. The FTO samples were produced by spray pyrolysis technique. The cleaning process is shown to have a fundamental importance for the final sensitivity of the samples when multiple re-usage is adopted. The role of electrical resistivity and morphology of the films are investigated. The influence of pH sequence of measurements from 2 to 12 is presented. Both increasing and decreasing the pH values sequence of measurements are compared. Electrical, morphological, time evolution and electrochemical experiments are correlated in the main discussion. A physical-chemical model is presented to explain the main mechanisms of charge adsorption and desorption. Parameters not commonly reported in the literature are proven to have fundamental importance in sensors behavior and characterization.

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mentioning

confidence: 99%

Mechanisms of Ion Detection for FET-Sensors Using FTO: Role of Cleaning Process, pH Sequence and Electrical Resistivity

Nascimento

Mulato

2017

Mat. Res.

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“…The operation of the IEGFET is very similar to the conventional MOSFET except that the metal gate is replaced by the interdigitated structure on the sensing film, i.e., the IEGFET is based on the formation of a double layer at the solution/oxide film interface that generates a surface potential which changes the turn-on voltage, V T(IEGFET) , enabling the ion concentration in a solution to be determined. 6,27,28 It is seen in Fig. 2a Fig.…”

Section: Resultsmentioning

confidence: 88%

“…The channel current can be modified using a concentration of H + ions, while the drain-source voltage V DS is kept constant. Figure 2 shows the transfer characteristics (drain current versus reference electrode voltage, I DS -V ref ) in the linear region for the IEGFET sensor for V DS fixed at 0.2 V and V ref varied from 0 to 4 V. According to the EGFET theory, the V T(IEGFET) could be estimated by using the relationship 5,6 :…”

Section: Resultsmentioning

confidence: 99%

“…4,5 However, the device suffered from poor isolation between the device and the solution causing the harsh environment in the solutions to degrade the device's reliability. 6,7 To overcome the disadvantages, in 1983, Van der Spiegel et al 8 improved an ISFET structure as an extended gate field effect transistor (EGFET). Later, in 2000, Chi et al 9 presented an EGFET with a commercial metal-oxide-semiconductor field-effect transistor (MOSFET).…”

Section: Introductionmentioning

confidence: 99%

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Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

Ali

2016

Journal of Elec Materi

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An interdigitated extended gate field effect transistor (IEGFET) has been proposed as a modified pH sensor structure of an extended gate field effect transistor (EGFET). The reference electrode and the extended gate in the conventional device have been replaced by a single interdigitated extended gate. A metal-semiconductor-metal interdigitated extended gate containing two multi-finger Ni electrodes based on zinc oxide (ZnO) thin film as a pHsensitive membrane. ZnO thin film was grown on a p-type Si (100) substrate by the sol-gel technique. The fabricated extended gate is connected to a commercial metal-oxide-semiconductor field-effect transistor device in CD4007UB. The experimental data show that this structure has real time and linear pH voltage and current sensitivities in a concentration range between pH 4 and 11. The voltage and current sensitivities are found to be about 22.4 mV/pH and 45 lA/pH, respectively. Reference electrode elimination makes the IEGFET device simple to fabricate, easy to carry out the measurements, needing a small volume of solution to test and suitable for disposable biosensor applications. Furthermore, this uncomplicated structure could be extended to fabricate multiple ions microsensors and lab-on-chip devices.

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“…According to these advantages, the excellent performances of devices of the AlInN/GaN heterostructure have been reported over the past few decades [14,15,16,17,18]. However, only a few works on ion sensors are based on the AlInN/GaN heterostructure [19,20,21,22]. T. Brazzini firstly investigated the performance of a GaN-caped AlInN/AlN/GaN field effect transistor as the pH-sensing application and demonstrated a drain current pH sensitivity from −1.37 μA/pH to −4.16 μA/pH, dependent on the device geometry.…”

Section: Introductionmentioning

confidence: 99%

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Yan

Son

Dai

et al. 2018

Sensors

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The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al0.83In0.17N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al0.83In0.17N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

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Highly sensitive palladium oxide thin film extended gate FETs as pH sensor

Cited by 134 publications

References 31 publications

Mechanisms of Ion Detection for FET-Sensors Using FTO: Role of Cleaning Process, pH Sequence and Electrical Resistivity

Mechanisms of Ion Detection for FET-Sensors Using FTO: Role of Cleaning Process, pH Sequence and Electrical Resistivity

Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

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