Influence of the development process on ultimate resolution electron beam lithography, using ultrathin hydrogen silsesquioxane resist layersThe use of molecular resist in scanning proximal probe lithography (SPPL) offers a novel and promising maskless lithographic method with sub-10 nm resolution. Here, the authors present their investigation of the patterning capabilities of C-Methylcalix[4]resorcinarene at ambient conditions using SPPL. The STM-based setup operates in constant-current Fowler-Nordheim regime and results in positive-tone self-developing phenomena. The lithographic operation is performed at currents in the range of pico-ampere, writing speeds of 1-10 lm=s, and bias voltages ranging from 20 up to 70 V. Currently, the authors have achieved feature sizes from 7 nm to micrometers depending on the applied exposure parameters. The direct patterning process shows high reproducibility and reliability over this large feature range.