Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films

Teraji, Tokuyuki; Yoshizaki, Satoshi; Wada, Hideki; Hamada, Michiko; Ito, Toshimichi

doi:10.1016/j.diamond.2004.01.031

Cited by 74 publications

(28 citation statements)

References 19 publications

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“…4,5 A great effort is also being devoted to produce devices from synthetic single crystal diamond (SCD) films grown by homoepitaxial chemical vapor deposition (CVD) onto low-cost SCD substrates. 6,7 Different photodetector structures based on CVD diamond have been reported by several research groups. 8,9 A promising approach is to use a Schottky photodiode (PD) in a multilayered transverse configuration due to its low leakage current, low noise level, zero-bias operation, no signal due to secondary electrons, fast response time, and good responsivity.…”

Section: Introductionmentioning

confidence: 99%

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Ciancaglioni

Venanzio

Marinelli

et al. 2011

Journal of Applied Physics

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X-ray and UV photovoltaic Schottky photodiodes based on single crystal diamond were recently developed at Rome “Tor Vergata” University laboratories. In this work, different rectifying metallic contact materials were thermally evaporated on the oxidized surface of intrinsic single crystal diamond grown by chemical vapor deposition. Their impact on the detection performance in the extreme UV and soft x-ray spectral regions was studied. The electrical characterization of the metal/diamond Schottky junctions was performed at room temperature by measuring the capacitance–voltage characteristics. The diamond photodiodes were then tested both over the extreme UV spectral region from 10 to 60 eV by using He-Ne DC gas discharge as a radiation source and toroidal vacuum monochromator, and in the soft x-ray range from 6 to 20 keV at the Diamond Light Source synchrotron x-ray beam-line in Harwell (UK). In both experimental setups, time response and spectral responsivity were analyzed for all the investigated Schottky contact materials. A good agreement between the experimental data and theoretical results from Monte Carlo simulations is found

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Section: Introductionmentioning

confidence: 99%

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Ciancaglioni

Venanzio

Marinelli

et al. 2011

Journal of Applied Physics

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“…As a wide band gap semiconductor with properties such as low dark current, fast response time, high carrier mobility, good radiation resistance, and bio-compatibility, diamond has drawn much attention recently in the field of ionization radiation detection [1][2][3] for UV, 4 gamma-ray, 5 X-ray, 6,7 neutrons, [8][9][10] protons 11 and heavy ions, 12 especially in Large Hadron Collider accelerator. Diamond detector shows advantages in low dark current and good radiation resistance.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline CVD diamond detector: Fast response and high sensitivity with large area

et al. 2014

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Polycrystalline diamond was successfully used to fabricate a large area (diameter up to 46 mm) radiation detector. It was proven that the developed detector shows a fast pulsed response time and a high sensitivity, therefore its rise time is lower than 5 ns, which is two times faster than that of a Si-PIN detector of the same size. And because of the large sensitive area, this detector shows good dominance in fast pulsed and low density radiation detection.

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“…Diamond, thanks to its overwhelming electrical, mechanical and chemical properties, offers important perspectives for electrical [1][2][3][4] and optical [5][6][7] applications. Meanwhile, some features such as the non uniform film thickness or surface roughness obtained after crystal growth by chemical vapour deposition (CVD) are limiting factors for these applications.…”

Section: Introductionmentioning

confidence: 99%

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

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Several 65 µm thick epitaxial diamond films prepared on (100) Ib substrates by high power, pulsed microwave plasma assisted chemical vapour deposition (HP-PMPCVD) are studied as a function of surface treatments by cathodoluminescence (CL) and photoluminescence (PL) spectroscopies. They are either as-grown, or polished, or etched by a microwave oxygen plasma, or after applying subsequently the two last processes. In CL spectra, bands due to defects occur at 2.3 eV, 3.07 eV, 3.6 eV and 4.7 eV, the last one being specific of polished surfaces, with nearly no contrast in the luminescence image, contrary to other CL images. A fundamental result consists in demonstrating that the defects induced by polishing can be removed by oxygen plasma etching. Additionally, in order to assess how luminescence spectra originate from a peculiar depth or not, a bevelled sample is studied. PL spectra are acquired on the sample side while CL spectra are measured at several points on the bevel top side till to the Ib substrate. Comparison of the two sets of result show that the H3 signal originates from the Ib substrate even if it is present in the CL spectra of the film. An analysis of the change in the intensity of the TO free exciton line, defect bands and H3 signal, along decreasing photon energies, as a function of the thickness of the remaining HP-PMPCVD film, is performed with the help of a model taking the diffusion of the unrecombined excitonic pairs and the re-excited photoluminescence into account. CL images recorded at specific wavelengths, which do not show inverted contrast, are also assessed. From these data, the exciton diffusion length is evaluated to 11 µm in the major part of the epitaxial layer except for the first 20 µm close to the Ib substrate where it decreases down to 2 µm. This study sheds light on the interpretation of luminescence spectra excited by an electron beam in undoped diamond layers. Defects bands due to damages induced by polishing and etching processes are also documented.

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Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films

Cited by 74 publications

References 19 publications

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

Polycrystalline CVD diamond detector: Fast response and high sensitivity with large area

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

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