Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-<i>K</i> Dielectric

Saha, Jewel Kumer; Jang, Jin; Billah, Mohammad Masum; Bukke, Ravindra Naik; Kim, Youn Goo; Mude, Narendra Naik; Siddik, Abu Bakar; Islam, Md Mobaidul; Do, Youngbin; Choi, Munsu

doi:10.1109/ted.2020.2969958

Cited by 48 publications

(47 citation statements)

References 29 publications

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“…Therefore, the orbital splitting of Zn2p1/2 and Zn2p3/2 is 23.10 eV. [1] Which confirms the presence of Zn atoms at regular sites of ZnO crystals shown in Figure S4b (Supporting Information). The Gd 4d peak at 142.1 eV confirms the chemical bonding state of Gd to form Gd-O-Gd composition (see Figure S4c, Supporting Information).…”

Section: Wwwadvelectronicmatdesupporting

confidence: 62%

“…ZnO/ c) HfO x 400 40.0 10 7 -2015 [56] c) ZnO/ a) ZrO x 350 12.76 10 8 0.01 -2020 [1] c) LiZnO/ c) ZrO x 400 85.0 10 6 0.3 -2011 [24] a) GaZnO/ b) SiO 2 400 0.006 10 4 --2010 [52] e) ZrZnO/ a) GdO x 500 1.06 10 6 --2014 [57]…”

Section: Resultsunclassified

“…Transport properties are closely related to metal-oxygen bond (MO), oxygen vacancies (V o ), and hydroxyl groups (OH) in the film. [1,12] The O 1s peak intensity could be deconvoluted into three peaks using Gaussian-Lorenz fitting method. The binding energies of oxygen related defects are ≈531 to ≈532 eV.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…Therefore, MO, V o , and −OH are deconvoluted separately. [1,14,31,39,63] According to the binding energy level these subpeaks assigned to metal oxygen ( )×100. We observed the increase of metal-oxygen bond and decrease of V o from MO bonding peak to V o peak ratio.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…Spray pyrolysis is one of the promising technologies due to its low cost and large-scale uniform deposition, compared to other solution-processed techniques, such as ink-jet printing and spin coating. [1][2][3][4] Nowadays, the metal-oxide TFT has of increasing attention to replacing the Si-based electronic devices due to its transparency in visible region and low manufacturing cost. [5][6][7][8] energy (719 kj mole −1 ) compare to Zn (250 kj mole −1 ).…”

Section: Introductionmentioning

confidence: 99%

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Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

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ZnO is a well-known oxide semiconductor because of its excellent electrical and optical properties due to its crystalline structure with high carrier mobility and tunable bandgap by alloying. [13,14] Although, ZnO TFT has high carrier density with crystalline structure, it has some limitations, such as instabilities. It is known that the instability of pristine ZnO is related to the grain boundary defects related to oxygen vacancy and Zn interstitial. [15] Most of pristine ZnO TFTs show negative turn-on voltage owing to its high carrier concentration, which limits the application of the TFTs to gate drivers of active-matrix organic light-emitting diode display. Metal doping in ZnO, such as In, Li, N, F, Al, Ga, Hf, La, Mg, Y, and Zr is proposed to improve the performance and/or stability. [16-23] Many ternary and quaternary metal oxide TFTs are reported to improve both stability and mobility, but the results are not promising. Adamopoulos et al. [24] reported high mobility of ZnO TFT (85 cm 2 V −1 s −1) by Li incorporation on spray pyrolyzed ZrO x gate insulator. The increase in mobility by Li incorporation is due to the increase in grain size, but due to high carrier concentration and defects in semiconductor and interface, the offstate currents are high (10 −8 A). Whereas, Park et al. [25] reported La doping in amorphous IZO TFT which reduces the oxygen deficiency and improves the stability but the mobility is low (≈4.2 cm 2 V −1 s −1). Xifeng et al. [26] reported electron mobility ≈1.94 cm 2 V −1 s −1 by Hf doping in amorphous IZO TFT, where Hf works as carrier suppressor and increases the on/off current ratio by lowering the off-currents. Tue et al. [27] reported the Zr doping in amorphous IZO TFT to control the oxygen vacancies due to its lower slandered electron potential to the off current. Jun et al. [28] reported the La doping in amorphous ZTO TFT to improve the subthreshold swing and on/off current ratio. The electronegativity, ionic radius, and dopant-oxygen bond dissociation energy are important to improve the performance and stability of oxide TFT. As the difference of electronegativity between dopants and oxygen rises, the metaloxygen bond energy increases. Besides, the low standard electrode potential (SEP) of metal ion can decrease the traps due to its binding tendency with oxygen. [29] Higher bond dissociation energy leads to the stronger metal-oxygen network and less oxygen vacancy, which helps to improve the stability of the TFTs. [30] A Gd has lower electronegativity (1.20) compare to Zn (1.65), lower SEP (−2.27 V) compare to Zn (−0.76 V) and higher bond dissociation The simultaneous doping effect of Gadolinium (Gd) and Lithium (Li) on zinc oxide (ZnO) thin-film transistor (TFT) by spray pyrolysis using a ZrO x gate insulator is reported. Li doping in ZnO increases mobility significantly, whereas the presence of Gd improves the stability of the device. The Gd ratio in ZnO is varied from 0% to 20% and the Li ratio from 0% to 10%. The optimized ZnO TFT with codoping of 5% Li and 10% Gd exhibits...

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Section: Wwwadvelectronicmatdesupporting

confidence: 62%

Section: Resultsunclassified

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

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Oxide Thin Film Transistor Fabrication Processes

2024

Oxide Thin Film Transistors

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Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

Lee

Islam

et al. 2021

Adv Eng Mater

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The short channel coplanar amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistor (TFT) is reported by introducing a ZrAlO x (ZAO) interlayer deposited by spray pyrolysis at the substrate temperature of 350 °C. The atomic ratio (at. %) of In:Ga:Zn:O is 1:2.5:1.2:5.2 in the a‐IGZO film deposited by sputtering. The a‐IGZO TFT with ZAO layer with 0.87 μm channel length exhibits the field‐effect mobility of 6.44 cm2 V−1 s−1, the threshold voltage of −2.16 V, and on/off current ratio of 7.6 × 107. It is found from the X‐ray photoelectron spectroscopy depth profile and high‐resolution transmission electron microscope analysis that some Zr atoms diffuse into the a‐IGZO underlayer. The formation of ZrO bonds on a‐IGZO surface region reduces the carrier concentration in the a‐IGZO TFT offset region, between source/drain contact and the channel, and blocks the carrier diffusion into the channel. This reduces the field‐effect mobility of 10 μm channel length TFT from 21.86 to 14.01 cm2 V−1 s−1, but the ZAO layer protects the a‐IGZO from the diffusion of H2O and O2. As a result, 0.87 μm TFT shows high on/off current ratio and stable under 85 °C and 85% relative humidity test for 2 days.

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Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric

Cited by 48 publications

References 29 publications

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Oxide Thin Film Transistor Fabrication Processes

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

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Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric

Cited by 48 publications

References 29 publications

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Oxide Thin Film Transistor Fabrication Processes

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlOx Interlayer

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Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer