Highly Stable Thermal Characteristics of a Novel In_0.3Ga_0.7As_0.99N_0.01(Sb)/GaAs High-Electron-Mobility Transistor

Abstract

A novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂Vth/∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3Ga0.7As0.99N0.01(Sb)/GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109) mS/mm at 450 (300) K.

Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor

“…Figure 5 shows the g m and I DSS characteristics with respect to the gate-to-source bias (V GS ) at elevated temperatures. The observed g m, max and peak I DSS values were found to be 161.5 (142) mS mm −1 and 230 (220) mA mm −1 respectively at 300 (450) K. The studied device also demonstrates improved current-driving capability (I DSS ) and maximum room-temperature extrinsic transconductance (g m, max ) as compared with other works [14,[20][21][22][23], as shown in table 2. Define the gate-voltage swing (GVS) value as the available gate bias range at a 10% drop from the g m, max value.…”

“…The studied device has also demonstrated improved thermal threshold stability as compared to other HFETs [14,[21][22][23], as also listed in table 2. Superior thermal threshold stability is mainly due to the improved channel confinement capability in the In 0.2 Ga 0.8 AsSb/GaAs QW structure with devised high discontinuity barriers.…”

“…Though the academic studies of having successfully applied Sb incorporation to laser devices [9][10][11][12][13], improved the crystalline quality [14] or effectively reduced the energy gap [15] have already been cited and discussed in section 1, we have further performed the Shubnikovde Hass (SdH) measurement on simple InGaAs/GaAs QW samples with/without the Sb incorporation. SdH is a powerful tool to give detailed information about the subband occupancies and carrier transport property in the 2DEG system.…”

“…Recently, some efforts [9][10][11][12][13] have been devoted to using Sb atoms as surfactants in the GaAs/InGaAsNSb quantum well (QW) laser to improve the crystal quality. The advantages of incorporating Sb atoms into the optoelectronic devices and electronic devices can not only improve the threshold current densities [9][10][11][12][13][14], but also effectively reduce the energy bandgap [15] and red shift the light emission. Therefore, this paper presents for the first time a dopedchannel field-effect transistor (DCFET) device using the dilute In 0.2 Ga 0. by the molecular beam epitaxy (MBE) system to improve the interfacial quality, device characteristics and thermal stability at the same time.…”

Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures

“…13,14 Thermal annealing was attempted in order to remove defects or nonradiative impurities and improve the luminescence efficiency. 15,16 In addition, HEMTs consisting of Sb-doped dilutechannel designs 17,18 were studied to demonstrate improved carrier transport and high-linearity gain characteristics, since doping Sb atoms can reduce the bandgap and smooth out the heterointerface at the same time.…”