Highly strained In0.5Ga0.5P as wide-gap material on InP substrate for heterojunction field effect transistor application

Scheffer, F.; Lindner, Andreas; Liu, Q.; Heedt, C.; Reuter, R.; Prost, W.; Lakner, Hubert; Tegude, F.‐J.

doi:10.1016/0022-0248(94)91071-5

Cited by 5 publications

(4 citation statements)

References 8 publications

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“…Our results thus indicate that anisotropic relaxation develops mainly in bulk material in a manner consistent with the results reported in Ref. 9 The segregation process is an additional mechanism that may reduce strain in the growing layer. We finally note that inspection of Fig.…”

Section: Strain Relaxationsupporting

confidence: 91%

Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application

Cohen¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Growth of carbon doping Ga 0.47 In 0.53 As using CBr 4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buriedheterostructure lasers grown by metalorganic molecular beam epitaxial growthThe crystalline quality of tensile strained Ga 0.25 In 0.75 P layers grown on InP substrates was investigated. The samples were grown by metalorganic molecular beam epitaxy. Little or no relaxation was found in Ga 0.25 In 0.75 P layers which were up to 500 Å thick. The relaxation of layers less than 700 Å thick was isotropic, but thicker ͑bulk-like͒ layers relaxed anisotropically, with the main relaxation along the ͓110͔ direction. Fully strained layers up to a thickness of 650 Å were obtained by employing strain compensation. Heterostructure field effect transistors ͑HFETs͒ incorporating a tensile 200 Å thick Ga 0.25 In 0.75 P barrier were fabricated. A composite channel of compressive strained Ga 0.3 In 0.7 As and lattice matched GaInAs was used to compensate the tensile strained barrier. The HFET channel was partially doped. A peak transconductance of 200 mS/mm was obtained in HFETs having a 1 m long gate. The drain-source breakdown voltage was 10 V, and gate-drain breakdown voltage was 11 V. The unity current gain frequency, f T , and the maximum frequency of oscillation, f max , were 23.5 and 50 GHz, respectively. Resonant tunneling diodes with Ga 0.25 In 0.75 P barriers and a Ga 0.47 In 0.53 As well were demonstrated as well. Peak to valley current ratios of 1.15 and 5 were obtained at room temperature and 77 K, respectively.

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Section: Strain Relaxationsupporting

confidence: 91%

Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application

Cohen¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1 reveals an asymmetric widening of the thick (relaxed) layer peak towards the substrate peak indicating composition grading. The composition grading may be a result of Ga atom segregation towards the growing surface [7]. The segregation process is an additional mechanism that can reduce the strain in the growing layer.…”

Section: Resultsmentioning

confidence: 99%

Study of Ga/sub x/In/sub 1×x/P layers grown on InP for HFET application

Cohen

Zisman²,

Bahir³

et al.

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials

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The crystalline quality of tensile strained Gao.25ho.75P layers grown on InP substrates was investigated. Samples were grown by metal-organic molecular beam epitaxy. Little or no relaxation was found in Gao.25Ino.75P layers which were up 500A thick. Thicker layers exhibited anisotropic strain relaxation, and the main relaxation direction was [ li0 1. Using strain compensation we were able to reduce relaxation in 650A thick layers. HFET devices with a tensile 200A thick Ga0.25ho.75P barrier, a composite channel, and modulated channel doping were fabricated. The HFETs with 1 micron long gates exhibited a transconductance higher than 150 mS/mm for a wide range of gate voltages, and a breakdown voltage of 9V.

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“…1nP:Fe substrate lattice matched modulationdoped Ino.szAlo.48As/I~.S3G~.47As/InP heterostructures were grown by low-pressure metal-organic vapour-phase epitaxy (LP-MOVPE) [7]. The layer sequence and growth conditions in this study are summarised in fig.…”

Section: Materials Growth and Device Fabricationmentioning

confidence: 99%

“…Different types of breakdown (buffer [3], onstate impact ionisation [4], off-state gate-drain field [ 5 ] ) have been identified. Novel HFET layer stacks with improved wide-band gap material [6,7], modified doping schemes [SI and gate-recess technology [9] have been developed. In this study we focus on the impact of an extended lateral gate-recess process in order to reduce the high electric field at the drain end of the gate and finally to improve the breakdown performance.…”

Section: Introductionmentioning

confidence: 99%