Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application

Abstract

Growth of carbon doping Ga 0.47 In 0.53 As using CBr 4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buriedheterostructure lasers grown by metalorganic molecular beam epitaxial growthThe crystalline quality of tensile strained Ga 0.25 In 0.75 P layers grown on InP substrates was investigated. The samples were grown by metalorganic molecular beam epitaxy. Little or no relaxation was found in Ga 0.25 In 0.75 P layers which were up to 500 Å thick. The relaxation of layers less than 700 Å thick was isotropic, but thicker ͑bulk-like͒ layers relaxed anisotropically, with the main relaxation along the ͓110͔ direction. Fully strained layers up to a thickness of 650 Å were obtained by employing strain compensation. Heterostructure field effect transistors ͑HFETs͒ incorporating a tensile 200 Å thick Ga 0.25 In 0.75 P barrier were fabricated. A composite channel of compressive strained Ga 0.3 In 0.7 As and lattice matched GaInAs was used to compensate the tensile strained barrier. The HFET channel was partially doped. A peak transconductance of 200 mS/mm was obtained in HFETs having a 1 m long gate. The drain-source breakdown voltage was 10 V, and gate-drain breakdown voltage was 11 V. The unity current gain frequency, f T , and the maximum frequency of oscillation, f max , were 23.5 and 50 GHz, respectively. Resonant tunneling diodes with Ga 0.25 In 0.75 P barriers and a Ga 0.47 In 0.53 As well were demonstrated as well. Peak to valley current ratios of 1.15 and 5 were obtained at room temperature and 77 K, respectively.