Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP

Abstract

Layers of Ga0.25In0.75P were grown on InP by metalorganic molecular beam epitaxy and studied by ion channeling and asymmetric high-resolution x-ray diffraction. The angular difference between the substrate and the layer channeling angles agreed with the corresponding angular difference calculated from the x-ray results. Negligible relaxation was found in Ga0.25In0.75P layers up to a thickness of 50 nm. Thicker layers were found to be partially relaxed. In the channeling experiments an additional minimum in the substrate angular scan profile at an angle corresponding roughly to the layer’s minimum yield was found. This extra minimum was attributed to the steering effect at the strained GaInP/InP interface [S. Hashimoto, Y. Q. Feng, W M. Gibson, L. J. Schowalter, and B. D. Hunt, Nucl. Instrum. Methods B 13, 45 (1986)], and was confirmed by a comparison with the x-ray diffraction measurements.

Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling

“…In this way, the potential of these RBS/C analyses for strain determination has been successfully shown on several semiconductor systems [14][15][16], and henee it can be considered as one of the best alternatives to solve the restrictions in the XRD analysis. Even so, recent RBS/C measurements of strain in different heterojunctions (based on GaAs [17], GaN [18], InP [19], and Si [20]) have shown substantial limitations. Actually, it has been proven that, when the kink angle is lower than the critical angle, RBS/C does not reproduce the real strain valúes because of the presence of steering effeets.…”

Growth of strained Ga1−xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

“…In most practical cases, band gap engineering purposes require the use of strained GaInP alloys but, it is not straightforward that the knowledge got from the study of strained GaInAs growth can apply directly to GaInP alloys, considering for instance, the difference in surface reconstructions and hence energies as well as in mixing enthalpies for both alloys. Previous work on the growth of strained GaInP alloys have mainly focused on the growth on GaAs [1] or InP [2,3] substrates whereas a few studies have explored the growth of InP on GaP either by organometallic vapor-phase epitaxy [4,5] or by chemical beam epitaxy [6]. However, to the best of our knowledge, no systematic study on GaP substrates, which allows a direct comparison with the well-known GaInAs/GaAs system, has been undertaken.…”

Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

“…The potential of RBS/C has been proved on several semiconductor heterostructures ͑HSs͒, where elastic strain is a main issue affecting band gap and carrier density. 3 However, this kind of RBS/C studies has shown anomalous behaviors in the angular scans ͑asymmetries or double dips͒, [4][5][6] which decrease the accuracy in the strain determination. The origin of these anomalous channeling processes has been clearly linked to the presence of steering effects ͑deviation of the projectile due to electrostatic interactions with the target atoms͒ at the interface of the junction.…”