Strained layer growth of Ga1−xInxP on GaAs (100) and GaP (100) substrates

Growth and characterisation of layers with composition close to crossover from direct to indirect band gap

“…On the other hand, in the case of In 0:3 Ga 0:7 P alloy the spinodal decomposition of the alloy should result in the formation of In 0:5 Ga 0:5 P and In 0:17 Ga 0:83 P alloys. The tensile strained layers were more influenced by spinodal decomposition [5].…”

Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy

“…The relaxation of compressed In x Ga 1Àx P layers grown by GSMBE on GaP and the evolution of the critical thickness for 3D growth as a function of x In has been studied in Refs. [10,11]. The transition from 2D to 3D growth occurs in the InGaP/GaP system for x In ¼ 0:2 at the H 3D critical thickness of 20 MLs.…”

“…The layer thickness was selected with the aim to approach the critical thickness to allow the effective strain relaxation through misfit dislocations. On the contrary we wanted to avoid the 3D growth after exceeding the critical thickness for 3D growth [10,11]. The H 3D for In 0.03 Ga 0.97 P is not exactly known.…”