Optimization of MOVPE-grown InxGa1−xP self-assembled quantum dots on GaP

Datta, Shouvik; Bhattacharya, Arnab; Gokhale, M. H.; Pai, S. P.; John, Joachim; Arora, B. M.

doi:10.1016/s0022-0248(02)01207-1

Cited by 11 publications

(5 citation statements)

References 16 publications

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“…While pure InP QDs show areal densities below 2×10 10 cm −2 , the density increases to values around 1 × 10 11 cm −2 for Ga x In 1−x P QDs with high Ga concentrations. MOVPE-grown (Ga)InP QDs have been reported with areal densities from 2 × 10 8 cm −2 [5] to 1 × 10 10 cm −2 [4]. It is worth noting that these areal densities of QDs grown by MOVPE are less by a factor of about 10 compared to the maximum value reported in this study.…”

Section: Morphologycontrasting

confidence: 40%

“…Metal-organic vapor phase epitaxy (MOVPE) grown Ga x In 1−x P QDs on a GaP substrate have been rather intensively studied [3][4][5][6], while their growth by molecular beam epitaxy (MBE) was reported much less and for only a few different compositions [7]. For both growth methods rather large QDs with areal densities below 10 10 cm −2 have been reported [5,6,8,9] compared to the In x Ga 1−x As/GaAs material system which has about the same lattice mismatch of ∼7% at most.…”

Section: Introductionmentioning

confidence: 99%

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The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP

et al. 2009

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We present a study of the growth, morphology and optical properties of Ga(x)In(1-x)P quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.

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Section: Morphologycontrasting

confidence: 40%

Section: Introductionmentioning

confidence: 99%

The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP

et al. 2009

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“…It is to be noted that we used epi-ready GaP wafers only and hence did not find the necessity of any pre-cleaning or etching steps before loading GaP substrates into the MOVPE reactor. This eliminates the substrate preparation step before the MOVPE growth, which was described as an essential step by several groups [17,23,24]. Photoluminescence (PL) is excited with a He-Cd laser beam (λ = 325 nm), dispersed with a 1/4 m monochromator and detected by a photomultiplier tube.…”

Section: Methodsmentioning

confidence: 99%

“…Various other strategies using GaP crystals coupled with other crystalline materials like GaAs, InP or silicon have also been tried to evolve valuable device properties out of such unusual combinations [11][12][13][14]. Furthermore, the exciting developments related to the metal organic vapour phase epitaxy (MOVPE) growth of various nanostructures on GaP transparent substrates necessitate the optimization of layer properties for GaP homoepitaxial layers [10,[15][16][17]. The interesting observations made on the optoelectronic properties of nanowires grown on GaP (1 1 1)B substrates highlight the importance of a high crystalline quality of GaP (1 1 1)B epilayers [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substrates

Sharma¹,

Dixit²,

Ganguli³

et al. 2008

Semicond. Sci. Technol.

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Gallium phosphide (GaP) homoepitaxial layers are optimized by varying the growth temperature, growth rate and V/III ratio in a low-pressure metal organic vapour phase epitaxy (MOVPE) process. It is observed that we need high growth temperature, low growth rate and an optimum value of the V/III ratio in order to obtain a mirror finish surface morphology. The surface morphology is mirror finish for an epitaxial layer grown 820 • C when viewed under a stereo-zoom microscope for a V/III ratio of about 100 or more. A sharp and intense excitonic photoluminescence (PL) feature and a fine structure associated with donoracceptor pair recombination confirm a high optical quality of the grown layer, which is supported by high-resolution x-ray diffraction measurements. For silicon doping of GaP using silane in low-pressure MOVPE, our results confirm theoretical predictions available in the literature and the values of a distribution coefficient lie in a similar range known for other conventional semiconductors. This optimization provides high-quality GaP (1 1 1)B epilayers needed for the development of either nanostructure-based optoelectronic devices on transparent substrates or polarization-sensitive infrared photodetectors based on two-photon absorption.

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“…It has been highly considered due to its green-light emission, electronic conductivity, and electronic transportation properties. As single crystal GaP substrates can also be used as an essential template for synthesizing indium gallium phosphide ͑InGaP͒ and gallium arsenide ͑GaAs͒ materials for optoelectronic applications, 4,5 its synthesis and applications on 1D nanostructures has yet to be investigated thoroughly.…”

Section: Introductionmentioning

confidence: 99%

Electron field emission from well-aligned GaP nanotips

Tsai

Leu

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Field emission of electrons from single crystal gallium phosphide ͑GaP͒ nanotips has been investigated. GaP nanotip arrays were fabricated using silane-methane-argon-hydrogen based plasma using the self-masking dry etching technique in an electron-cyclotron-resonance microwave plasma enhanced chemical vapor deposition system. These nanotips have an average of 2 and 80 nm in apex and bottom diameters, respectively. They are 900 nm in height, which makes them the perfect electron emission source for their high aspect ratio topography. A nanosized silicon carbide ͑SiC͒ cap on each GaP nanotip in the array has been found. The SiC core has a heterointerface with GaP crystal that was observed using a high resolution transmission electron microscope. Field emission analysis shows low turn-on fields of 8.5-9 V / m. Cold electron emissions in Fowler-Nordheim type current-voltage were observed from such GaP nanotip arrays.

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Optimization of MOVPE-grown InxGa1−xP self-assembled quantum dots on GaP

Cited by 11 publications

References 16 publications

The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP

The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP

Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substrates

Electron field emission from well-aligned GaP nanotips

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Optimization of MOVPE-grown InxGa1−xP self-assembled quantum dots on GaP

Cited by 11 publications

References 16 publications

The structural and optical characterization of high areal density GaxIn1−xP quantum dots on GaP

The structural and optical characterization of high areal density GaxIn1−xP quantum dots on GaP

Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substrates

Electron field emission from well-aligned GaP nanotips

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The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP

The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP