Highly transparent copper iodide thin film thermoelectric generator on a flexible substrate

Coroa, João; Faustino, Bruno M. Morais; Marques, A.; Bianchi, C.; Koskinen, Tomi; Juntunen, Taneli; Tittonen, Ilkka; Ferreira, I.

doi:10.1039/c9ra07309d

Cited by 57 publications

(38 citation statements)

References 12 publications

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“…Although the Cu deficiency was not reported quantitatively in the study by Jun et al, [ 22 ] these x values correspond to the Cu vacancy concentration of 1–4 × 10 20 cm −3 found in CuI films. [ 31 ] The number of atoms with type i ( N i ) considered in this work are shown in Table 1 . Every defect (Sn dopants and Cu vacancy) was introduced before the melt, which allowed us to identify defect configurations without any bias, in contrast to a method that introduced defects after the melt‐quench process.…”

Section: Methodsmentioning

confidence: 99%

Origin of p‐Type Conduction in Amorphous CuI: A First‐Principles Investigation

Lee

Youn

Jeong

et al. 2020

Physica Status Solidi (b)

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Recently, Jun et al. (Adv. Mater. 2018, 30, 1706573) reported Sn‐doped amorphous phases of CuI (a‐CuI) as a new class of transparent p‐type semiconductors. It is surprising that high mobilities are found despite amorphous structures tend to localize carriers, particularly the directional p orbitals of anions. To reveal the microscopic origin of the new p‐type amorphous semiconductors, density functional theory calculations are performed, and structural and electrical properties of a‐CuI are investigated. Amorphous models from melt‐quench simulations consist of structural motifs that resemble local orders in crystalline polymorphs of CuI. Despite the absence of translational symmetry, states at valence band maximum (VBM) are substantially extended in linear ways due to the hybridization between I‐5p states, explaining the high hole mobilities in the experiment. Sn‐doped a‐CuI is also investigated and it is found that Sn atoms stabilize the amorphous structure without disturbing the hole transport. Furthermore, results on nonstoichiometric models show that Cu‐deficiency increases the hole concentration in a‐CuI and also enhances the delocalization of VBM states, which is consistent with the experimental observation that the hole mobility increases with doping concentrations. Herein, the origin of hole conduction in amorphous CuI is enlightened, which is believed to contribute in the development of high‐performance p‐type amorphous materials.

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Section: Methodsmentioning

confidence: 99%

Origin of p‐Type Conduction in Amorphous CuI: A First‐Principles Investigation

Lee

Youn

Jeong

et al. 2020

Physica Status Solidi (b)

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“…The SEM images of nanostructured CuI synthesized using the above-mentioned methods are depicted in Figure 2 c. A clear difference in the size of the nanostructures is observed, and this study reveals that the CuI film prepared by solid iodination of Cu works better in both TE characteristics and in terms of optical transparency. Later on, Coroa et al [ 12 ] constructed a transparent flexible thermoelectric generator using 17 p-n modules on a polyimide Kapton ® CS substrate, where CuI and GZO were used as p-type and n-type materials, respectively as shown in Figure 2 d and sketched in Figure 2 e.…”

Section: Temperature-dependent Classification Of Low-toxic Earth-abundant Thermoelectric Materialsmentioning

confidence: 99%

Low-Toxic, Earth-Abundant Nanostructured Materials for Thermoelectric Applications

2021

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This article presents recent research directions in the study of Earth-abundant, cost-effective, and low-toxic advanced nanostructured materials for thermoelectric generator (TEG) applications. This study’s critical aspect is to systematically evaluate the development of high-performance nanostructured thermoelectric (TE) materials from sustainable sources, which are expected to have a meaningful and enduring impact in developing a cost-effective TE system. We review both the performance and limitation aspects of these materials at multiple temperatures from experimental and theoretical viewpoints. Recent developments in these materials towards enhancing the dimensionless figure of merit, Seebeck coefficient, reduction of the thermal conductivity, and improvement of electrical conductivity have also been discussed in detail. Finally, the future direction and the prospects of these nanostructured materials have been proposed.

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“…Such an approach provides an alternative to conventional resistive and capacitive sensing technologies [ 7 ] for realizing tactile human-machine user interfaces. For successful integration into these applications, the thermoelectric sensors are required to possess a light and flexible form factor, as well as to be environmentally friendly [ 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Large-Area Thermal Distribution Sensor Based on Multilayer Graphene Ink

Koskinen

Juntunen

Tittonen

2020

Sensors

Self Cite

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Emergent applications in wearable electronics require inexpensive sensors suited to scalable manufacturing. This work demonstrates a large-area thermal sensor based on distributed thermocouple architecture and ink-based multilayer graphene film. The proposed device combines the exceptional mechanical properties of multilayer graphene nanocomposite with the reliability and passive sensing performance enabled by thermoelectrics. The Seebeck coefficient of the spray-deposited films revealed an inverse thickness dependence with the largest value of 44.7 μV K−1 at 78 nm, which makes thinner films preferable for sensor applications. Device performance was demonstrated by touch sensing and thermal distribution mapping-based shape detection. Sensor output voltage in the latter application was on the order of 300 μV with a signal-to-noise ratio (SNR) of 35, thus enabling accurate detection of objects of different shapes and sizes. The results imply that films based on multilayer graphene ink are highly suitable to thermoelectric sensing applications, while the ink phase enables facile integration into existing fabrication processes.

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Highly transparent copper iodide thin film thermoelectric generator on a flexible substrate

Abstract: Simultaneously transparent and flexible conductive materials are in demand to follow the current trend in flexible technology. A highly transparent and flexible thermoelectric generator of 17 p–n modules was constructed based on copper iodide thin films.

Cited by 57 publications

References 12 publications

Origin of p‐Type Conduction in Amorphous CuI: A First‐Principles Investigation

Origin of p‐Type Conduction in Amorphous CuI: A First‐Principles Investigation

Low-Toxic, Earth-Abundant Nanostructured Materials for Thermoelectric Applications

Large-Area Thermal Distribution Sensor Based on Multilayer Graphene Ink

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