Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

Abstract

The bipolar resistive switching characteristics of atomic-layer-deposited NbAlO-based devices have been investigated for nonvolatile memory applications. With the help of a thin Al 2 O 3 buffer layer, highly uniform and reproducible bipolar resistance switching cycles could be observed. Four typical multilevel operations, with resistances being at 1000, 350, 145, and 75 Ω, respectively, are also successfully demonstrated by varying the current compliance during the set process. The resistance ratios of high-resistance state to low-resistance state are more than 10 3 within 5000 cycles during the test without any degradation. Moreover, the estimated retention lifetime at room temperature is sufficiently long to fulfill the typical ten-year requirement. Considering its excellent memory switching behavior, a resistance switching device composed of a NbAlO film with a thin Al 2 O 3 buffer layer is a possible candidate to be integrated into future memory processes.Index Terms-Atomic layer deposition, conductive filament, NbAlO, resistive switching.

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

“…Resistive random access memory (RRAM) is one of the most promising candidates for next-generation non-volatile memory applications due to its simple structure, low power consumption, high-speed operation, nondestructive readout, and high-density integration [1]. Many semiconducting and insulating materials including binary transition metal oxides, perovskite oxides, chalcogenides, sulfides, amorphous silicon, organic materials, and ferroelectric materials have been investigated extensively for RRAM applications [2], especially metal oxides such as Pr 1 − x Ca x MnO 3 [3,4], SrZrO 3 [5], STO [6], Nb 2 O 5 [7], NiO [8], ZrO 2 [9], SiO 2 [10], WO 3 [11], TiO 2 [12,13], Al 2 O 3 [14], ZnO [15], and HfO 2 [16-18]. …”

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

“…Extensive research has been devoted for improving both the stability and the RS properties of these oxide materials. [4][5][6] Notably, Wei et al have proposed a TaO x ReRAM device with stable resistance switching based on the redox reaction mechanism. 7 They claim that tantalum is one of the most promising transition metals for RS operation and that the stability of the resistance state in TaO x ReRAM is determined by the stability of the redox pair.…”

The Recent Advances of Research on Memristor and Memristive Characteristic Devices

“…Liu [12] investigates the unipolar resistive switching behaviors of sputtered ZnO thin films by changing the electrode combinations of Pt and Ru. Chen's [13] devices possess the properties of reversible and reproducible resistance switching, large on/off ratio around 10 6 . Peng [14] get similar results with same structure but different materials.…”

“…Chen's [13] devices possess the properties of reversible and reproducible resistance switching, large on/off ratio around 10 6 . Peng [14] get similar results with same structure but different materials.…”