Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

Abstract

Nanoscale multilayer structure TiO2/BaTiO3/TiO2 has been fabricated on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO2/BaTiO3/TiO2/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO2 play a crucial role in the resistive switching phenomenon and the introduced TiO2/BaTiO3 interfaces result in the high uniformity of bipolar resistive switching characteristics.

Structural transition and temperature-driven conductivity switching of single crystalline VO2(A) nanowires

“…[1][2][3][4] Among these oxides, vanadium dioxide (VO 2 ) is a typical representative exhibiting fruitful structural transition behaviors and distinct structure-related properties. [1][2][3][4] Among these oxides, vanadium dioxide (VO 2 ) is a typical representative exhibiting fruitful structural transition behaviors and distinct structure-related properties.…”

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

“…For instance, in 2012, robust nonpolar RS behaviors have been reported in Pt/BFMO/Pt memory devices by Luo et al [443] (see Figure 19a,b), with intensive RS mechanism being studied. More recently, a new concept for RS device optimizing by alternative structures of oxide/ferroelectrics/oxide has also been put forward by Ma et al [444], where attractively highly uniform bipolar resistive switching behaviors have been demonstrated in TiO 2 /BaTiO 3 /TiO 2 multilayer, verifying well the practicability and reliability of this structure (see Figure 19c,d). …”

“…The bipolar resistive switching characteristics in TiO 2 /BaTiO 3 /TiO 2 device: ( c ) I-V curves with 700 consecutive cycles; and ( d ) distributions of V set and V reset in 700 cycles (Ma et al [444]).…”

Highly reliable bipolar resistive switching in sol-gel derived lanthanum-doped PbTiO3 thin film: Coupling with ferroelectricity?

“…Because of the compliance current, the conductive filament may not completely form (i.e., it may continue to grow if a compliance current is set larger). When the applied voltage turns to reverse, opposite reactions and migration of oxygen vacancies will take place and the conductive filament probably breaks at the electrode/PLT interface [12,38], making the device turn to OFF state with the transformation from HRS to LRS. Within the first tens or hundreds of RS cycles, due to the complex physical and chemical process in the films, the form-break process of the conductive filament is not well reproducible, resulting in fluctuation observed in Figs.…”