Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system

Liu, Nanliu; Wu, Jerry J.; Li, Wenhui; Luo, Ruihong; Tong, Yuzhen; Zhang, Guoyi

doi:10.1016/j.jcrysgro.2013.11.023

Cited by 19 publications

(18 citation statements)

References 22 publications

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“…All these results clearly showed that a GaN epitaxial layer with a device-quality smooth as-grown surface and a good thickness uniformity, comparable to that produced by the MOCVD method, can be obtained by the HVPE method, contrary to the beliefs regarding HVPE growth that are commonly held among the GaN material community. [30][31][32][33][34] HVPE growth on freestanding GaN substrates produced surfaces of a similar quality. As examples, a DIC surface image and an AFM image of unintentionally doped GaN layers grown by the HVPE method are shown in Figs.…”

Section: Resultsmentioning

confidence: 85%

“…wafer. 33,34) The whole of the as-grown surface of the above HVPEgrown 6-in. GaN template was specular, and no pits or hillocks could be observed by the naked eye or by optical microscopy.…”

Section: Resultsmentioning

confidence: 99%

“…However, only a few attempts have been made to apply this technique, probably because of widely held beliefs regarding the drawbacks of the HVPE method, such as the high background donor concentrations (resulting from residual Si and O, instead of C) 17,23) and difficulties in producing smooth as-grown surfaces [30][31][32] and uniform thickness, as required for device structures. 33,34) Even for high-crystalline-quality GaN crystals grown by HVPE, residual donor concentrations from 10 15 to 10 17 cm −3…”

Section: Introductionmentioning

confidence: 99%

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Resultsmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…The growth process was performed in argon ambient with metallic Ga as a source material and hydrogen chloride and ammonia as active gases. The growth was performed at temperatures of 850-950°C that were somewhat lower than in a typical HVPE process of 1020-1050°C (Usikov et al, 2013;Sato et al, 2013;Fujito et al, 2009;Liu et al, 2014;Paskova et al, 2010) the growth rate was 0.2-1 µm/min and the total thickness of the layers was 10-20 µm. The growth was initiated at low growth rate and then continued with increased growth rate.…”

Section: Methodsmentioning

confidence: 99%

“…Hydride vapor phase epitaxy is a well-established growth technique for fabrication of Group III-Nitrides thick films and bulk crystals with good crystalline quality (Liu et al, 2014;Wu et al, 2013;Sato et al, 2013;Paskova et al, 2010;Fujito et al, 2009;Yoshida et al, 2008) The technique is quite versatile allowing to grow films and crystals of n-type (typically, by Si doping), p-type (by Mg doping) and semi-insulating (by deep levels Fe or Zn compensation) (Richter et al, 2013;Usikov et al, 2008;Lipski, 2010;Reshchikov et al, 2011). The growth rate can be varied from tens of nanometers per Science Publications AJAS hour to hundreds of microns per hour.…”

Section: Introductionmentioning

confidence: 99%

Deep Traps Spectra in Undoped Gan Films Grown by Hydride Vapor Phase Epitaxy Under Various Conditions

Polyakov¹,

Smirnov²,

Говорков³

et al. 2014

American Journal of Applied Sciences

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Decreasing the residual donors density and deep traps spectra densities in undoped GaN films grown by Hydride Vapor Phase Epitaxy (HVPE) is very important for promoting the use of such material in highvoltage/high-power rectifiers, radiation detectors. In this study we studied the effects of changing the growth temperature of undoped HVPE GaN films on these properties. The two groups of undoped GaN HVPE samples analyzed in this study were grown at growth temperature being either 850ºC or 950ºC. Measurements by means of Capacitance-Voltage (C-V) profiling, deep levels transient spectroscopy, Micro Cathode Luminescence (MCL) spectroscopy and imaging and by Electron Beam Induced Current (EBIC) showed a much lower density of residual donors (by almost two orders of magnitude), of deep electron traps and hole traps (by about an order of magnitude) and considerably (about 1.5 times) longer diffusion length of charge carriers in the films grown at 850ºC compared to samples prepared at 950ºC. The data obtained indicate that there is an optimal reduced growth temperature (close to 850ºC) resulting in lower concentration of shallow donors and deep traps while still preserving the high crystalline quality of the layer. This is of paramount importance for device applications of HVPE grown undoped GaN films.

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A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance

Paudel

Zvanut

Iwińska

et al. 2019

Physica Status Solidi (b)

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Herein, a carbon‐related point defect in thick free‐standing carbon‐doped GaN substrates grown by halide chemical vapor deposition is examined. Carbon is intentionally introduced to concentrations between 2 × 1017 and 1019 cm−3, and the number of point defects is proportional to the carbon concentration. The carbon center is detected using electron paramagnetic resonance spectroscopy after photo‐excitation with light greater than 2.8 eV. Simultaneous monitoring of the defect and a shallow donor confirms that the excitation occurs via removal of an electron from the deep carbon‐related acceptor and subsequent capture by the shallow donor. The study indicates that the defect level for the carbon defect is at least 0.7 eV above the valence band edge and therefore an excellent candidate for growth of semi‐insulating GaN.

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Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system

Cited by 19 publications

References 22 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Deep Traps Spectra in Undoped Gan Films Grown by Hydride Vapor Phase Epitaxy Under Various Conditions

A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance

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