Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance

Qin, Guangzhao; Yan, Qing‐Bo; Qin, Zhenzhen; Yue, Shidong; Cui, Huijuan; Zheng, Qing‐Rong; Su, Gang

doi:10.1038/srep06946

Cited by 219 publications

(208 citation statements)

References 58 publications

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“…Figure 2 shows the lattice structure of phosphorene and the electronic band structures of monolayer, bilayer, trilayer and bulk BP. Due to the puckered configuration of phosphorene, anisotropy is observed in its optical properties,41, 42, 43 mechanical properties,13, 44, 45, 46 thermoelectric properties,47 electrical conductance48 and Poisson's ratio 45, 49, 50, 51. The high in‐plane anisotropic conductivity of few‐layer BP has also been reported 41.…”

Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 99%

“…Apart from its ability to tune the band gap between the valence band and conduction band local extrema, strain also plays a significant role in tuning the effective masses, thereby affecting the exciton anisotropy and binding strength 75. The properties of BP depends on the layer thickness,42 applied strain force,45, 48, 52, 53, 64, 76 stacking order77, 78 and external electric field,79 enabling the realization of devices for different applications such as electronics,35, 37, 80, 81, 82, 83 optoelectronics,84, 85, 86 energy storage,79, 87 saturable absorbers (SA),2, 88, 89, 90, 91, 92 pulsed lasers93, 94, 95 and sensing 96…”

Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 99%

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Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two‐dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications— this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few‐layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state‐of‐art of phosphorene‐based devices. In addition, a detailed presentation on the demand for future studies to promote well‐systemized fabrication methods towards large‐area, high‐yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered.

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Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 99%

Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 99%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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“…Semiconducting black phosphorus (BP) is a layered material [1] with considerable current interest, due to its potential application for optoelectronic [2] and thermoelectric devices [3,4]. Recent success in growing two-dimensional, hexagonal "postgraphene" systems [5], including BP monolayers (so-called phosphorene) [6,7], has also intensified the interest in understanding its electronic structure [8,9] and transport properties [10].…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and thermoelectric transport of black phosphorus

2017

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We investigate anisotropic electronic structure and thermal transport properties of bulk black phosphorus (BP). Using density functional dynamical mean-field theory we first derive a correlation-induced electronic reconstruction, showing band-selective Kondoesque physics in this elemental p-band material. The resulting correlated picture is expected to shed light onto the temperature and doping dependent evolution of resistivity, Seebeck coefficient, and thermal conductivity, as seen in experiments on bulk single crystal BP. Therein, large anisotropic particle-hole excitations are key to consistently understand thermoelectric transport responses of pure and doped BP.

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“…Moreover, the higher carrier mobilities (1, 000 cm 2 /Vs) 10 compared to TMDC monolayers, the strongly anisotropic electronic and optical properties, [11][12][13][14][15] as well as the robustness under elastic strain [16][17][18] have already ensured novel uses of BP in electronic, 9,10,12,19,20 photonic, [21][22][23] and thermoelectric 24,25 applications.…”

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confidence: 99%

Multipurpose Black-Phosphorus/hBN Heterostructures

2016

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Black phosphorus (BP) has recently emerged as a promising semiconducting twodimensional material. However, its viability is threatened by its instability in ambient conditions, and by the significant decrease of its band gap in multilayers. We show that one could solve all the aforementioned problems by interfacing BP with hexagonal boron nitride (hBN). To this end, we simulate large, rotated hBN/BP interfaces using linear-scaling density functional theory (DFT). We predict that hBN-encapsulation preserves the main electronic properties of the BP monolayer, while hBN spacers can be used to counteract the band gap reduction in stacked BP. Finally, we propose a model for a tunneling field effect transistor (TFET) based on hBN-spaced BP bilayers.Such BP TFETs would sustain both low-power and fast-switching operations, including negative differential resistance behaviour with peak-to-valley ratios of the same order of magnitude as those encountered in transition metal dichalcogenide TFETs.1 Keywords 2D heterostructures; tunneling transistor; linear-scaling DFT; electric fields Since its inception, the two-dimensional (2D) material community has switched focus several times between different materials, aiming to satisfy different technological requirements. For instance, the lack of a band gap in graphene caused an increased interest in semiconducting transition metal dichalcogenides (TMDCs). While their many qualities have enabled their remarkable success in semiconductor electronics, 1,2 spintronics, 3 and optoelectronics, 2,4 the associated flaws of TMDCs are also of concern. Most notably, they only exhibit a direct band gap when in monolayer form, 5 the carrier mobilities are far smaller than those encountered in graphene, and their large band gap implies that the infrared (IR) spectrum cannot be harnessed by TMDC optoelectronics.In this context, the spotlight has recently shifted to layered black phosphorus (BP), 6,7 a material which rectifies the most important shortcomings of TMDCs. The band gap of BP is direct even in stacked forms, and its value changes significantly with the number of layers: from 0.3 eV in bulk to 1.5-2.0 eV for the monolayer. 8,9 This range of values allows BP to

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Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance

Cited by 219 publications

References 58 publications

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Electronic structure and thermoelectric transport of black phosphorus

Multipurpose Black-Phosphorus/hBN Heterostructures

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