Historischer Leser

Hausmann, Jutta; Becker, Eve-Marie; Jeßing, Benedikt; Männlein‐Robert, Irmgard; Ronning, C. Neale

doi:10.1515/bibherm.0112

Lexikon Der Bibelhermeneutik

DOI: 10.1515/bibherm.0112

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Historischer Leser

Jutta Hausmann¹,

Eve-Marie Becker²,

Benedikt Jeßing³

et al.

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“…2,4,18 Si͑O n Bu͒ 4 has complete tetra-alkoxide ligands, and shows a better self-limiting nature than tris͑tert-butoxy͒silanol, ͑t-BuO͒ 3 SiOH, which was used by Gordon et al as a Si source to deposit hafnium silicate films. 8,19 The self-limiting characteristic of precursors is important for the layer-by-layer film growth in the ALCVD process. 11 In this paper we focused on the deposition and the electrical characterization of hafnium silicates, grown by ALCVD using the combination of Hf͑N͑C 2 H 5 ͒ 2 ͒ 4 and Si͑O n Bu͒ 4 .…”

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confidence: 99%

Atomic Layer Chemical Vapor Deposition and Electrical Characterization of Hafnium Silicate Films

Kim

Yong

2005

J. Electrochem. Soc.

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Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films using a precursor combination of tetrakis (diethylamido) hafnium, Hf(normalN(C2H5)2)4 , and tetra- n -butyl orthosilicate, Si(OnBu)4 was studied for high-dielectric gate oxides. The ALCVD temperature window in our study was 290-350°C with a growth rate of 1.1 Å/cycle. We investigated the effect of deposition conditions, such as deposition temperature, pulse time of precursor, and purge injection, on the film growth. The saturated composition of the Hf/ (Hf+Si) ratio was 0.37, and the impurity concentrations were less than 1 atom %. The dielectric constant (k) of the as-deposited hafnium silicate film increased upon annealing at 600°C, but decreased for annealing above 800°C. Hysteresis in the capacitance-voltage measurements was less than 0.3 V before and after annealing. The leakage current density of the as-deposited, 600°C, and 800°C annealed films was 5.3×10−2 , 2.2×10−2 , and 2.7×10−60.3emnormalA∕cm2 , respectively, at a bias of −1 V.

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confidence: 99%

Atomic Layer Chemical Vapor Deposition and Electrical Characterization of Hafnium Silicate Films

Kim

Yong

2005

J. Electrochem. Soc.

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Historischer Leser

Cited by 1 publication

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Atomic Layer Chemical Vapor Deposition and Electrical Characterization of Hafnium Silicate Films

Atomic Layer Chemical Vapor Deposition and Electrical Characterization of Hafnium Silicate Films

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