Hole and electron currents in diffused P<sup>+</sup>-N-N<sup>+</sup>diodes and IIL structures

To match the base functions to the band structure and scattering rates, they were derived from the steady state distributions for various values of the electric field. The field values were selected in pairs, + E and -E\ this choice has the effect of treating the odd and even parts of the k distribution as separate base functions. E varied from 1 kV/cm (for which the even part of f(k) is virtually thermal) to 40kV/cm (about the maximum field encountered in the simulations), concentrating on the sensitive range near threshold. The same values of E were used for all three values of the intervalley scattering rate. Most of the base functions were derived from the P-valley distribution, which is much more sensitive to field than the satellitevalley distribution. It has been found that the steady-state electron velocities and valley-population fractions are simulated to within about 2 or 3% provided that at least 16 base functions are used. In practice the number chosen was 20.Abstract: A selected bibliography is presented detailing the relevant technical literature describing the technology development and applications for integrated injection logic (I 2 L) and merged transistor logic (MTL). The period covered is, in effect, from 1971 to July 1977.

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Efficient modeling of thyristor static characteristics from device fabrication data

Roulston

Nakhla²

1979

IEEE Trans. Electron Devices

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Hole and electron currents in diffused P⁺-N-N⁺diodes and IIL structures

Cited by 3 publications

References 7 publications

Base current and dominant time constant of an n+n−pn+ transistor operating in the upward mode

Base current and dominant time constant of an n+n−pn+ transistor operating in the upward mode

Selected bibliography on integrated injection logic (I2L)/merged transistor logic (MTL) technology

Efficient modeling of thyristor static characteristics from device fabrication data

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Hole and electron currents in diffused P+-N-N+diodes and IIL structures

Cited by 3 publications

References 7 publications

Base current and dominant time constant of an n+n−pn+ transistor operating in the upward mode

Base current and dominant time constant of an n+n−pn+ transistor operating in the upward mode

Selected bibliography on integrated injection logic (I2L)/merged transistor logic (MTL) technology

Efficient modeling of thyristor static characteristics from device fabrication data

Contact Info

Product

Resources

About

Hole and electron currents in diffused P⁺-N-N⁺diodes and IIL structures