2020
DOI: 10.1021/acsnano.0c04174
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Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction

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Cited by 12 publications
(11 citation statements)
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References 49 publications
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“…35,42 The energy splittings are Δ AB ≅ 120 meV and Δ AC ≅ 300 meV, much larger compared to the reported bulk splitting value (Δ AB Bulk = 30−50 meV and Δ AC Bulk = 160−200 meV). 39,40,43,44 This is consistent with quantum confinement effect in our system. To verify this, we have performed an uncoupled band effective mass simulation to predict the A, B, and C transitions energies using Comsol (see SI).…”
supporting
confidence: 91%
See 1 more Smart Citation
“…35,42 The energy splittings are Δ AB ≅ 120 meV and Δ AC ≅ 300 meV, much larger compared to the reported bulk splitting value (Δ AB Bulk = 30−50 meV and Δ AC Bulk = 160−200 meV). 39,40,43,44 This is consistent with quantum confinement effect in our system. To verify this, we have performed an uncoupled band effective mass simulation to predict the A, B, and C transitions energies using Comsol (see SI).…”
supporting
confidence: 91%
“…To verify this, we have performed an uncoupled band effective mass simulation to predict the A, B, and C transitions energies using Comsol (see SI). In our simulation, we have used recently reported values for the wurtzite HH and LH effective masses of InP ( m HH = 0.49 and m LH = 0.21) . Since there are no reports about the wurtzite SO effective mass, we have used m SO = 0.17, an average of the reported values for the cubic phase ( m SO = 0.12–0.21). , As for the bulk energy spacing between the HH, LH, and SO bands, we have used the values Δ AB Bulk = 40 meV and Δ AC Bulk = 172 meV .…”
mentioning
confidence: 99%
“…Under this assumption, a common scattering time of 120 fs and a reduced effective mass 1/ mr= 1/me+1/mh of 0.085 are retrieved from fitting the measured sum mobility spectrum, which is close to the literature values of ≈0.07. [ 40 ] Additionally, a DC value of 2900 cm 2 V −1 s −1 for the sum of electron mobility and hole mobility is gained. Taking advantage of a previous density functional theory (DFT) calculation of the ratio of the effective masses of holes and electrons of 7.5 allows separating an individual electron DC‐mobility of 2470 cm 2 V −1 s −1 and a hole DC‐mobility of 330 cm 2 V −1 s −1 .…”
Section: Modeling Device Transport From Gigahertz and Terahertz Mobil...mentioning
confidence: 99%
“…The vapor–liquid–solid (VLS) method using catalytic seeds has been widely used to grow nanostructures of covalent crystalline group IV or III–V semiconductors with a high degree of structure engineering (e.g., phase, composition, and orientation) and correspondingly tunable properties such as photon, electron, and phonon transport. ,, Recently, the VLS method has been expanded to other material systems, specifically with 2D-layered geometries, including GeS, GeSe, GaS, and GaSe. Taking advantage of a kinetically driven growth process, these anisotropic 2D-layered materials can be prepared in twisted nanowires or ribbon-like morphologies with unique properties. The GeS vdW layers grown with Au catalysts display helical nanowire growth with continuous interlayer twists, suggesting tunable optical/thermal conductivity .…”
mentioning
confidence: 99%