Hole conduction in zinc selenide crystals doped with elements of group V from the vapor phase

Diffusion layers of zinc selenide with a predominant edge emission

“…These bands are defined by emissive transitions at the acceptor centres, which are caused by replacements of ZnSe in the cation and anion sublattices. In the case of doping with the elements of V group, simple acceptor replacement centres As Se , Sb Se and Bi Se are formed [6], which is proved by electron paramagnetic resonance (EPR). According to our electro-physical studies, the ionisation energy of these centres comprises 110 ÷ 130 meV, which corresponds to the position of ω m maxima of the band E g -ω m + kT/2 with a precision of kT.…”

“…Here M is a degree of electron-phonon interaction determined by the ratio The hole conductivity may be also caused by interstitial atoms of Se i formed upon diffusion of V group elements [6]. This process leads to appearance of the А band in the luminescence spectra, for which the difference of the energies, [2,6], decreasing the concentration of holes and imposing a conductivity reversal.…”

“…This process leads to appearance of the А band in the luminescence spectra, for which the difference of the energies, [2,6], decreasing the concentration of holes and imposing a conductivity reversal.…”