Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well

Khannanov, M. N.; Кукушкин, И. В.; Gubarev, S. I.; Smet, J. H.; Klitzing, K. von; Wegscheider, Werner; Gerl, Christian

doi:10.1134/s0021364007050050

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…At small B this dependence has been elaborated. [18][19][20] There, the obtained values of m c are larger, which can be attributed to the increased width of the quantum wells compared to our samples. It is instructive to compare the value of the m c corresponding to the main CR at small B with the values of the density-of-states effective mass m DOS at the Fermi energy, since for B → 0 the values of m c theoretically converge to the values of m DOS .…”

Section: B Low Magnetic-field Regimementioning

confidence: 60%

“…Recently, it has become possible to fabricate high-mobility 2DHS in the growth direction of high symmetry ͑001͒ using carbon as an acceptor. [15][16][17] The dependence of m c on the density [18][19][20] or the quantum-well width 19,20 of such samples has been demonstrated in principle. In the investigated energy regime no dependence of m c on B was observed.…”

Section: Introductionmentioning

confidence: 99%

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Cyclotron resonance of carbon-doped two-dimensional hole systems: From the magnetic quantum limit to low magnetic fields

et al. 2009

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We report on cyclotron resonance ͑CR͒ experiments of high-quality C-doped two-dimensional hole systems in GaAs/AlGaAs quantum wells covering the microwave and far-infrared regimes. At high magnetic field B we observe a strong B dependence of the cyclotron mass m c which can be reproduced by calculations based on a 4 ϫ 4 Luttinger Hamiltonian in the axial approximation. At small B one main and up to three secondary CRs are found, which continuously evolve with smooth magnetic-field dependences. This has not been observed and predicted so far. In the regime of the magnetic quantum limit a further CR is observed, which can be attributed to a transition between Landau levels originating from the two different spin-split heavy-and light-hole subbands.

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Section: B Low Magnetic-field Regimementioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Cyclotron resonance of carbon-doped two-dimensional hole systems: From the magnetic quantum limit to low magnetic fields

et al. 2009

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“…Two-dimensional hole systems (2DHSs) on (001) oriented GaAs offer an interesting alternative to the more widely studied two-dimensional electron systems (2DESs). 2DHSs on (001) GaAs have effective masses roughly 4.5 to 7.5 times larger [1][2][3] than that in corresponding 2DESs which increases the importance of Coulomb interactions relative to the kinetic energy resulting in enhancement of importance of many-body effects. In addition, the p-wave symmetry of the valence band in GaAs leads to a much reduced hyperfine coupling of hole spins to the atomic nuclei which makes them an exciting alternative to electrons for quantum dot spinbased qubits [4][5][6] .…”

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confidence: 99%

Exploration of the limits to mobility in two-dimensional hole systems in GaAs/AlGaAs quantum wells

et al. 2012

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We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled by changing the Al mole fraction and the setback of the delta-doping layer. We varied the density over a range from 1.8 × 10 10 cm −2 to 1.9 × 10 11 cm −2 finding a nonmonotonic dependence of mobility on density at T = 0.3 K. Surprisingly, a peak mobility of 2.3 × 10 6 cm 2 /Vs was measured at a density of 6.5 × 10 10 cm −2 with further increase in density resulting in reduced mobility. We discuss possible mechanisms leading to the observed non-monotonic density dependence of the mobility. Relying solely on interface roughness scattering to explain the observed drop in mobility at high density requires roughness parameters which are not consistent with measurements of similar electron structures. This leaves open the possibility of contributions from other scattering mechanisms at high density.Two-dimensional hole systems (2DHSs) on (001) oriented GaAs offer an interesting alternative to the more widely studied two-dimensional electron systems (2DESs). 2DHSs on (001) GaAs have effective masses roughly 4.5 to 7.5 times larger 1-3 than that in corresponding 2DESs which increases the importance of Coulomb interactions relative to the kinetic energy resulting in enhancement of importance of many-body effects. In addition, the p-wave symmetry of the valence band in GaAs leads to a much reduced hyperfine coupling of hole spins to the atomic nuclei which makes them an exciting alternative to electrons for quantum dot spinbased qubits [4][5][6] . The presence of spin-orbit coupling and light/heavy hole mixing in the valence band of GaAs also allows extensive band structure engineering 7-9 . This feature has been exploited to alter the nature of groundstates in the quantum Hall regime.

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“…, where E(k) is the trion kinetic energy, M is the trion mass, and m e is the electron mass. Substituting M = 2m e + m h , where m h is the hole mass, we obtain [11] we obtain E > 4E(k). Thus the allowed range of recombination energy of three-particle complexes turns out to be greatly enhanced compared with the one of neutral excitons.…”

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confidence: 87%

Measurement of binding energy of negatively charged excitons in GaAs/AlGaAs quantum wells

Solovyev,

Kukushkin

2009

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We report a photoluminescence study of electron-hole complexes in specially designed semiconductor heterostructures. Placing a remote dilute layer of donors at different distances d from the quantum well leads to the transformation of luminescence spectra of neutral (X) and negatively charged (X − ) excitons. The onset of an additional spectral line and its energy dependence on d allows us to unambiguously relate the so-called X − trion state with charged excitons bound on charged donors in a barrier. The results indicate the overestimation in free-trion binding energies from previous studies of GaAs/Al0.3Ga0.7As quantum wells, and give their corrected values for QWs of width 200 and 300 Å in the limiting case of infinitely distant donors.

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Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well

Cited by 6 publications

References 9 publications

Cyclotron resonance of carbon-doped two-dimensional hole systems: From the magnetic quantum limit to low magnetic fields

Cyclotron resonance of carbon-doped two-dimensional hole systems: From the magnetic quantum limit to low magnetic fields

Exploration of the limits to mobility in two-dimensional hole systems in GaAs/AlGaAs quantum wells

Measurement of binding energy of negatively charged excitons in GaAs/AlGaAs quantum wells

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