Hole path concept for low switching loss and low EMI noise with high IE-effect

Sawada, M.; Sakurai, Yoshimasa; Ohi, Kota; Ikura, Yoshihiro; Onozawa, Yuichi; Yamazaki, Tomoyuki; Nabetani, Yoichi

doi:10.23919/ispsd.2017.7988894

Cited by 22 publications

(14 citation statements)

References 2 publications

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“…5 compares the simulated trade‐off relationships between the maximum reverse‐recovery d V KA /d t of FWD (at 1/10 rated current) and turn‐on loss E ON of TIGBT (at rated current). Due to the existence of the stray inductance, the d V KA /d t of FWD is higher than the d V CE /d t of TIGBT, and hence would cause a higher EMI noise especially operating at a small current [1–8]. Clearly, the proposed TIGBT exhibits a better trade‐off relationship than that of the conventional one.…”

Section: Resultsmentioning

confidence: 99%

“…However, the gate self‐charging effect would increase the d I CE /d t and d V KA /d t unintentionally. A simple expression of this effect is given as

C_{GC (OX)} \frac{d false(V_{normalFloat} - V_{normalGE} false)}{normaldt} = C_{GE} \frac{normald V_{GE}}{dt}

where C GC(OX) is the gate oxide component of C GC and V GE is the gate‐to‐emitter voltage [1–8]. Clearly, C GC(OX) has the same value in the proposed TIGBT and the conventional one.…”

Section: Device Structure and Operationmentioning

confidence: 99%

“…where C GC(OX) is the gate oxide component of C GC and V GE is the gate-to-emitter voltage [1][2][3][4][5][6][7][8]. Clearly, C GC(OX) has the same value in the proposed TIGBT and the conventional one.…”

mentioning

confidence: 99%

“…In order to improve the characteristics, many efforts have been focused on the reduction of the miller capacitance (C GC ) [1][2][3][4]. However, too small C GC would cause a high dV/dt noise especially when the free-wheeling diode (FWD) operates at a small current [5]. Suppressing the increase of the potential of the floating P-base region (V Float ) has been proven to be very effective, but some other electrical characteristics, such as the on-state voltage or the breakdown voltage, would be affected [5][6][7][8].…”

mentioning

confidence: 99%

“…However, too small C GC would cause a high dV/dt noise especially when the free-wheeling diode (FWD) operates at a small current [5]. Suppressing the increase of the potential of the floating P-base region (V Float ) has been proven to be very effective, but some other electrical characteristics, such as the on-state voltage or the breakdown voltage, would be affected [5][6][7][8]. Some efforts have been made to increase the gate-to-emitter capacitance (C GE ) to optimise the ratio of C GC to C GE , but it also increases C GC [9].…”

mentioning

confidence: 99%

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TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

Cheng

Chen

2018

Electron. lett.

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A trench insulated gate bipolar transistor (TIGBT) with emitterembedded gate is proposed. The emitter-embedded gate could increase the gate-to-emitter capacitance C GE without affecting the miller capacitance C GC. Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self-charging effect effectively. As a result, an excellent controllability on the turn-on dI CE /dt of the TIGBT and the dV KA /dt of the freewheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse-recovery dV KA /dt of the FWD can be reduced by 91.2% and the turn-on loss could be reduced by 53.1% under the same dV KA /dt.

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Section: Resultsmentioning

confidence: 99%

“…However, the gate self‐charging effect would increase the d I CE /d t and d V KA /d t unintentionally. A simple expression of this effect is given as

C_{GC (OX)} \frac{d false(V_{normalFloat} - V_{normalGE} false)}{normaldt} = C_{GE} \frac{normald V_{GE}}{dt}

where C GC(OX) is the gate oxide component of C GC and V GE is the gate‐to‐emitter voltage [1–8]. Clearly, C GC(OX) has the same value in the proposed TIGBT and the conventional one.…”

Section: Device Structure and Operationmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

Cheng

Chen

2018

Electron. lett.

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Analysis and optimization of the switching noise for Super-junction MOSFET in full bridge converter system

Tong

Liu

Zhao

et al. 2019

Solid-State Electronics

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Trench IGBT with stepped doped collector for low energy loss

Vaidya

Naugarhiya

Verma

2020

Semicond. Sci. Technol.

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In this paper, a novel technique of variation doping profile in collector region for trench IGBT is proposed. The collector region is segregated in three sections such that the section with higher concentration lies towards emitter side while section with lower concentration lie towards gate side. The presence of lightly doped collector section increases the recombination rate by injecting lesser charge carrier leading to reduction in carrier lifetime. This effect further improves turn-off process for proposed device. However, due to increased recombination rate, collector current density reduces. But, this reduction is counter balanced by heavily doped collector section which injects higher charge carriers and maintains current flow through proposed device. The electrical characteristics of proposed and conventional device is simulated and analyzed. It is inferred that proposed device exhibits 48% reduction in turn-off time further minimizing energy loss by 53.3%. The lower doping profile of collector region also reduces corner electric field but due to p ++ -col section the net electric field increases hence, improving the breakdown voltage by 8.7%. Additionally, proposed structure exhibits 16.7% increment in Baliga figure of merit as compared to conventional design.

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Hole path concept for low switching loss and low EMI noise with high IE-effect

Cited by 22 publications

References 2 publications

TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

Analysis and optimization of the switching noise for Super-junction MOSFET in full bridge converter system

Trench IGBT with stepped doped collector for low energy loss

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