Hole transport in gallium antimonide

Heller, M. W.; Hamerly, R. G.

doi:10.1063/1.335372

“…This is also the case for p-type III-V materials due to the presence of light and heavy holes. 21,22 While it is possible to approximately estimate the transport properties of two carrier types (electrons or holes) from the single field Hall effect results using an appropriate transport model, 15 imaging spectrograph using an f/6 achromatic lens. For 752.55 nm excitation, an 1800 groove/mm holographic grating optimized for use from 450 nm to 850 nm was utilized, unless otherwise specified, in which case a 1200 groove/mm holographic grating with a 750 nm blaze wavelength was utilized.…”

Section: Methodsmentioning

confidence: 99%

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

WS¹

2007

View full text Add to dashboard Cite

The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to have an understanding of the SSCR profile relative to the Raman probe depth. However, a priori determination of even the actual SSCR width is not always possible for GaSb under a wide range of doping levels. The primary objective of this report is to provide a convenient reference to aid in the determination of relative contributions to an observed GaSb Raman spectrum of SSCR scattering and bulk scattering for a range of excitation wavelengths, doping levels, and SSCR widths and types. Hence, Raman spectra of both n-type and p-type doped GaSb epilayers were obtained using 488 nm, 514.5 nm, 647.1 nm, and 752.55 nm excitation radiation. Both n-type and p-type doped GaSb epilayers were selected for investigation because these layers exhibit the two different SSCR types that are typically encountered with as-grown GaSb and relatedThe Lincoln Laboratory portion of this

show abstract

“…mi = 1.51mo m t = 0.22mo Effective mass of density of states m x = (9mimf) 1/3 = 0.87m 0 Holes heavy rrih = 0.4mn light mi = 0.05mo Split-off band m so = 0.14mo Effective mass of density of states m v = 0.8mo Effective mass of conductivity (Heller and Hamerly [1985]) m vc = 0.3mo…”

Section: Electronsmentioning

confidence: 99%

GALLIUM ANTIMONIDE (GaSb)

Vul

¹

1996

Handbook Series on Semiconductor Parameters

View full text Add to dashboard Cite

“…This is also the case for p-type III-V materials due to the presence of light and heavy holes. 21 focused onto the specimen with a 300 mm focal length cylindrical lens that produced a rectangular spot on the sample. Power densities at the sample were between ≈2 W/cm 2 and ≈9 W/cm 2 for all measurements.…”

Section: Methodsmentioning

confidence: 99%

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

Maslar

¹

,

Hurst

²

,

Wang

³

2007

View full text Add to dashboard Cite

The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to have an understanding of the SSCR profile relative to the Raman probe depth. However, a priori determination of even the actual SSCR width is not always possible for GaSb under a wide range of doping levels. The primary objective of this report is to provide a convenient reference to aid in the determination of relative contributions to an observed GaSb Raman spectrum of SSCR scattering and bulk scattering for a range of excitation wavelengths, doping levels, and SSCR widths and types. Hence, Raman spectra of both n-type and p-type doped GaSb epilayers were obtained using 488 nm, 514.5 nm, 647.1 nm, and 752.55 nm excitation radiation. Both n-type and p-type doped GaSb epilayers were selected for investigation because these layers exhibit the two different SSCR types that are typically encountered with as-grown GaSb and relatedThe Lincoln Laboratory portion of this work was sponsored by the Department of Energy (DOE), under Air Force contact number FA8721-05-C-0002. The opinions, interpretations, conclusions and recommendations are those of the authors and are not necessarily endorsed by the United States Government.2 materials. A range of doping levels were examined for each doping type so as to examine the effects of a varying SSCR width on the observed spectra. A secondary objective of this report is to demonstrate the performance of a spectroscopic system based on 752.55 nm excitation that is sensitive to bulk carrier properties in n-type and p-type doped GaSb epilayers over a wide doping range, unlike visible wavelength-based optical systems. Index Headings:GaSb; Raman spectroscopy; surface space charge region; depletion layer; accumulation layer; n-type doping, p-type doping * Corresponding author: e-mail: jmaslar@nist.govPhone: 301-975-4182 INTRODUCTIONGaSb and related alloy semiconductors, e.g., GaInAsSb and GaInSb, are of interest for mid-infrared sources and detectors and low-power, high-speed electronic devices. 1-3Characterization of these materials at various stages of device fabrication is critical to fabrication process development and a variety of metrologies have been employed for this purpose, [1][2][3] including Raman spectroscopy. 1,3 Raman spectroscopy can potentially be used to probe numerous materials properties of semiconductor materials, including crystal quality, alloy composition, and carrier concentration and mobility. 4 Although Raman spectroscopy is a potentially useful technique for characterizing a variety of GaSb material properties, the interpretation of Raman spectra of GaSb and related materials can be complicated by the inhomogeneous nature of the near-surface Raman scattering environment. Compound semiconductor materials exhibit a so-called surface space-charge 3 region (SSCR) that develops because of the presence of charge-...

show abstract

Hole transport in gallium antimonide

Cited by 33 publications

References 15 publications

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

GALLIUM ANTIMONIDE (GaSb)

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

Contact Info

Product

Resources

About