Hole transport in strained Si1−xGex alloys on Si1−yGey substrates

Abstract

Hole transport at 300 K in (001)-strained Si1−xGex alloys grown on unstrained Si1−yGey is theoretically analyzed considering the full band structure and new, accurate mobility experiments. Ohmic in-plane and out-of-plane drift mobilities are computed over the whole range of x and y. Velocity-field characteristics and transient overshoot effects are studied for fields along the 〈100〉 and 〈110〉 directions in technologically relevant configurations with Monte Carlo simulation. Overshoot peaks around 2×107 cm/s are found in strained Si and Ge-rich SiGe for 100 kV/cm and the 〈100〉 direction.

Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

“…It has been demonstrated that the hole mobility enhancement is as high as 10 for almost pure GOI MOSFETs (SGOI with Ge content of 93%). According to the comparison with the theoretical calculations [18] shown in Fig. 7.…”

“…One of the advantages of this local Ge [15][16][17]. The solid and dash lines mean the calculated results with and without strain (1.5%), respectively [18]. condensation technique is that compressive strain can be left in SGOI or GOI channels, because of the effect of the device geometry.…”

Pulsed laser crystallization of silicon–germanium films

“…Germanium and silicon-germanium (SiGe) have been attractive materials for transistor application because they can have a high carrier mobility especially in the tensile stressed case [1][2][3]. Pulsed laser induced crystallization of silicon films has been precisely investigated and widely applied to fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs) [4][5][6][7][8][9][10].…”

Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys

“…Refs. [11,16]) to the more general case of ternary random alloys. Alloy scattering rate in ternary Si 1−x−y Ge x C y is expressed as:…”

“…It appears that our results are in strong disagreement with Fischetti's, however it must be stressed that our scattering rate was calibrated together with a realistic impact ionization rate derived from ab initio calculations, whereas the early work of [7] relied on an arbitrary Keldysh formula. In SiGeC alloys, the total phonon rate is expressed as a weighted sum of the scattering rates due to Si-Si and Ge-Ge modes [11]:…”