2017 IEEE International Reliability Physics Symposium (IRPS) 2017
DOI: 10.1109/irps.2017.7936363
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Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

Guangfan Jiao
1
,
Seungjae Baek
2
,
Kab-Jin Nam
3
et al.
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