Hole trap generation in gate dielectric during substrate hole injection

Zhang, J.F.; Sii, H. K; Chen, A.H; Zhao, Ce Zhou; Uren, Michael J.; Groeseneken, G.; Degraeve, R.

doi:10.1088/0268-1242/19/1/l01

Cited by 10 publications

(6 citation statements)

References 28 publications

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“…5a, the impact of process conditions on the trapping kinetics is given and Fig. 5b clearly shows that the saturation level of the larger traps is not sensitive to process conditions, but that of the smaller traps is (33). This strongly supports that as-grown hole traps have two capture cross sections and the good agreement in Fig.…”

Section: B Features Of As-grown Hole Trapssupporting

confidence: 68%

Contribution of As-grown Hole Traps to NBTI

et al. 2007

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The increase in nitrogen concentration in the gate SiON enhances the negative bias temperature instability (NBTI) to such a level that it is limiting the lifetime of pMOSFETs. Despite early efforts, our understanding of it is incomplete. Confusions exist on the relative importance of positive charge in SiON for NBTI. Recently, tree different types of positive charge have been identified and this complicates the case further. There is little information on the contribution of each type of positive charge to NBTI. The objective of this work is to investigate the impact of one type positive charge, as-grown hole trapping, on NBTI. To suppress the charge loss during the measurement, the 'on-the-fly' technique is adopted. The as-grown hole trapping measured during negative bias temperature stress (NBTS) for sub-3nm SiON is compared with that in relatively thick SiO2 (>5nm), based on the well- established substrate hole injection technique. The saturation level in these two cases is similar. However, the capture cross section is three orders of magnitude apart. Numerical simulation is carried out to reconcile this difference. The result shows that as-grown hole trapping can dominate NBTI at short stress time, but its relative contribution reduces for longer time.

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Section: B Features Of As-grown Hole Trapssupporting

confidence: 68%

Contribution of As-grown Hole Traps to NBTI

et al. 2007

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“…For interface states, it is well known that effects of hydrogen critically depend on temperature. Our recent results, 21 however, show that the generation at 77 K can be the same as that at room temperature. When a device is exposed to H + /H 0 at room temperature, however, more interface states are created.…”

Section: Effects Of Hydrogen At Room Temperaturementioning

confidence: 58%

“…[21][22][23]25 The hole fluency level used here, however, is sufficiently low ͑Ͻ10 15 cm −2 ͒ that the stress-induced generation is negligible. To start, it is known that electrical stresses can create hole traps.…”

Section: A Conversion Of Defects Into Hole Traps By Hydrogen At Elevmentioning

confidence: 99%

“…Previous works [21][22][23]25 showed that hole traps could also be created without the H 2 exposure, when hole fluency, Nh, during the SHI, became sufficiently high. The question is whether different defects are involved in these two generation processes.…”

Section: A Conversion Of Defects Into Hole Traps By Hydrogen At Elevmentioning

confidence: 99%

“…Young et al 5 observed the formation of anomalous positive charges during avalanche electron injection at room temperature, but not at 77 K. The suppression at 77 K results from the freezing of hydrogen emission and transportation. 21 As a result, the evidence is equally convincing that hydrogen emission and transportation is not essential for positive charge formation. 21 As a result, the evidence is equally convincing that hydrogen emission and transportation is not essential for positive charge formation.…”

Section: Introductionmentioning

confidence: 98%

See 2 more Smart Citations

Effects of hydrogen on positive charges in gate oxides

Zhao

Zhang

2005

Journal of Applied Physics

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Articles you may be interested inCharge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor Appl. Phys. Lett. 97, 193504 (2010); 10.1063/1.3508955Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect Positive charge formation in gate oxides is a main source for the instability of the state-of-the-art metal-oxide-semiconductor device. Despite past efforts, the relation between hydrogenous species and positive charges is not fully understood. In this work, the effects of hydrogen on positive charges will be investigated at both elevated temperature ͑e.g., 400°C͒ and room temperature. At 400°C, it is found that hydrogen can convert some defects into hole traps. Three different types of positive charges have been reported recently. They are as-grown hole traps, anti-neutralization positive charges ͑ANPC͒, and cyclic positive charges ͑CPC͒. Although an exposure to hydrogen at 400°C neutralizes all three, impacts of hydrogen on these three types of defects are markedly different. After the hydrogen-induced neutralization, the defect responsible for ANPC is fully recovered and is the same as that in a fresh device. In contrast, the defect for CPC is not fully recovered and can be reactivated easily by stresses. The as-grown hole trap can be converted to ANPC through hydrogenation. At room temperature, it will be shown that there are two parallel processes for forming positive charges. One involves hydrogen and the other is through hole trapping. The relative importance of these two depends on the relative density of hydrogen against that of holes.

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Traps

Zhang

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Traps are the defects that can capture mobile charge carriers and this article focuses on the traps in gate dielectrics prepared on Silicon substrate, which dominates the modern semiconductor industry. There are two types of traps: the electron traps capture electrons and form negative space charges and the hole traps capture holes and form positive space charges. Traps degrade device performance and their minimization is a key task for the semiconductor device manufacturers. This article will summarize the impact of traps on the performance of devices used in modern semiconductor industry first, including shift in device parameters and device lifetime, time‐dependent dielectric breakdown, stress‐induced leakage, noises, and time‐dependent device‐to‐device variation. The key properties of traps will then be reviewed, including trapping kinetics, capture cross sections, effective densities, energy levels, and physical locations. Attentions will be paid to both the as‐grown traps and the generated ones and their similarity and differences will be highlighted.

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Hole trap generation in gate dielectric during substrate hole injection

Cited by 10 publications

References 28 publications

Contribution of As-grown Hole Traps to NBTI

Contribution of As-grown Hole Traps to NBTI

Effects of hydrogen on positive charges in gate oxides

Traps

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